Inventor

THEI KONG-BENG

TW224 patents

⚠️ This page may combine multiple inventors who share the name “THEI KONG-BENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

THEI KONG-BENG

TAIWAN SEMICONDUCTOR MFG

Ozone vapor clean method

Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow

Shallow trench isolation methods employing gap filling doped silicon oxide dielectric layer

Method for gap filling in a gate last process

Standard cell architecture and methods with variable design rules

Integration of the borderless contact salicide process

Dual damascene interconnect structures that include radio frequency capacitors and inductors

Integrating a first contact structure in a gate last process

Modifying work function in PMOS devices by counter-doping

Salicide field effect transistors with improved borderless contact structures and a method of fabrication

Salicide field effect transistors with improved borderless contact structures and a method of fabrication

Method for making a trench isolation having a conformal liner oxide and top and bottom rounded corners for integrated circuits

Photoresist etch back method for gate last process

Method for gate height control in a gate last process

Contact scheme for MOSFETs

Dummy patterns in integrated circuit fabrication

Method to reduce defects in shallow trench isolations by post liner anneal

Dishing-free gap-filling with multiple CMPs

Borderless contact process for a salicide devices

Method of forming integrated circuit having modified isolation structure

Integrating a capacitor in a metal gate last process

High-k metal gate CMOS patterning method

Spacer shape engineering for void-free gap-filling process

Reducing device performance drift caused by large spacings between active regions

Poly resistor and poly eFuse design for replacement gate technology

Method for gate height control in a gate last process

Method for tuning a work function of high-k metal gate devices

Method and apparatus for semiconductor device with improved source/drain junctions

TAIWAN SEMICONDUCTOR MFG CO LTD

High voltage integration for HKMG technology

Semiconductor structure and method of forming thereof

Through silicon via design for stacking integrated circuits

Through silicon via design for stacking integrated circuits

Through silicon via design for stacking integrated circuits

Dishing prevention dummy structures for semiconductor devices

Dishing prevention dummy structures for semiconductor devices

THEI KONG-BENG

Fuse structure

Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics

Poly resistor and poly eFuse design for replacement gate technology

CHUANG HARRY

Integrated circuit metal gate structure and method of fabrication

Strained transistor with optimized drive current and method of forming

Device layout for gate last process

CHUNG SHENG-CHEN

Resistive device for high-k metal gate technology

Method for N/P patterning in a gate last process

Device scheme of HKMG gate-last process

YEH CHIUNG-HAN

Method for tuning a work function of high-K metal gate devices

Integrating a first contact structure in a gate last process

LAW OSCAR M K

Standard cell architecture and methods with variable design rules

Low leakage capacitors including portions in inter-layer dielectrics

CHUANG HARRY HAK-LAY

Polysilicon design for replacement gate technology

CHANG HONG-DYI

Method for protecting a gate structure during contact formation