Inventor
CHU SHAO-FU SANFORD
SG39 patents
⚠️ This page may combine multiple inventors who share the name “CHU SHAO-FU SANFORD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
25 patentsUS6133079AOct 17, 2000
Method for reducing substrate capacitive coupling of a thin film inductor by reverse P/N junctions
CHARTERED SEMICONDUCTOR MFG88 citations98
US6297132B1Oct 2, 2001
Process to control the lateral doping profile of an implanted channel region
CHARTERED SEMICONDUCTOR MFG128 citations97
US6124194ASep 26, 2000
Method of fabrication of anti-fuse integrated with dual damascene process
CHARTERED SEMICONDUCTOR MFG90 citations97
US6709918B1Mar 23, 2004
Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology
CHARTERED SEMICONDUCTOR MFG87 citations96
US6117747ASep 12, 2000
Integration of MOM capacitor into dual damascene process
CHARTERED SEMICONDUCTOR MFG73 citations95
US7078998B2Jul 18, 2006
Via/line inductor on semiconductor material
CHARTERED SEMICONDUCTOR MFG32 citations92
US6410394B1Jun 25, 2002
Method for forming self-aligned channel implants using a gate poly reverse mask
CHARTERED SEMICONDUCTOR MFG21 citations92
US6291307B1Sep 18, 2001
Method and structure to make planar analog capacitor on the top of a STI structure
CHARTERED SEMICONDUCTOR MFG36 citations92
US6156602ADec 5, 2000
Self-aligned precise high sheet RHO register for mixed-signal application
CHARTERED SEMICONDUCTOR MFG43 citations92
US6841847B2Jan 11, 2005
3-D spiral stacked inductor on semiconductor material
CHARTERED SEMICONDUCTOR MFG41 citations91
US6284590B1Sep 4, 2001
Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors
CHARTERED SEMICONDUCTOR MFG29 citations91
US6372652B1Apr 16, 2002
Method for forming a thin-film, electrically blowable fuse with a reproducible blowing wattage
CHARTERED SEMICONDUCTOR MFG33 citations88
US7022578B2Apr 4, 2006
Heterojunction bipolar transistor using reverse emitter window
CHARTERED SEMICONDUCTOR MFG18 citations83
US6284594B1Sep 4, 2001
Formation of an interpoly capacitor structure using a chemical mechanical polishing procedure
CHARTERED SEMICONDUCTOR MFG16 citations83
US6972237B2Dec 6, 2005
Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth
CHARTERED SEMICONDUCTOR MFG7 citations74
US6881976B1Apr 19, 2005
Heterojunction BiCMOS semiconductor
CHARTERED SEMICONDUCTOR MFG7 citations74
US6750750B2Jun 15, 2004
Via/line inductor on semiconductor material
CHARTERED SEMICONDUCTOR MFG6 citations73
US6489191B2Dec 3, 2002
Method for forming self-aligned channel implants using a gate poly reverse mask
CHARTERED SEMICONDUCTOR MFG8 citations73
US6159759ADec 12, 2000
Method to form liquid crystal displays using a triple damascene technique
CHARTERED SEMICONDUCTOR MFG7 citations73
US7721414B2May 25, 2010
Method of manufacturing 3-D spiral stacked inductor on semiconductor material
CHARTERED SEMICONDUCTOR MFG6 citations72
US7268412B2Sep 11, 2007
Double polysilicon bipolar transistor
CHARTERED SEMICONDUCTOR MFG2 citations63
US6936519B2Aug 30, 2005
Double polysilicon bipolar transistor and method of manufacture therefor
CHARTERED SEMICONDUCTOR MFG3 citations63
US6924202B2Aug 2, 2005
Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact
CHARTERED SEMICONDUCTOR MFG2 citations63
US7238971B2Jul 3, 2007
Self-aligned lateral heterojunction bipolar transistor
CHARTERED SEMICONDUCTOR MFG0 citations52
US6908824B2Jun 21, 2005
Self-aligned lateral heterojunction bipolar transistor
CHARTERED SEMICONDUCTOR MFG1 citations52
YANGTZE MEMORY TECH CO LTD
4 patentsUS10847534B2Nov 24, 2020
Staircase structures for three-dimensional memory device double-sided routing
YANGTZE MEMORY TECH CO LTD7 citations84
US11069596B2Jul 20, 2021
Through silicon contact structure and method of forming the same
YANGTZE MEMORY TECH CO LTD2 citations73
US11721609B2Aug 8, 2023
Through silicon contact structure and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations63
US11710679B2Jul 25, 2023
Through silicon contact structure and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations63