P

Inventor

LIM PENG SOON

MY50 patents
⚠️ This page may combine multiple inventors who share the name “LIM PENG SOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

24 patents
US11380774B2Jul 5, 2022

Etching back and selective deposition of metal gate

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11018232B2May 25, 2021

Semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10879370B2Dec 29, 2020

Etching back and selective deposition of metal gate

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10707131B2Jul 7, 2020

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9941373B2Apr 10, 2018

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9478623B2Oct 25, 2016

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9449832B2Sep 20, 2016

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9431505B2Aug 30, 2016

Method of making a gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US12107134B2Oct 1, 2024

Semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10665685B2May 26, 2020

Semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10651283B2May 12, 2020

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11227929B2Jan 18, 2022

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12336269B2Jun 17, 2025

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12283616B2Apr 22, 2025

FinFET having a work function material gradient

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11915981B2Feb 27, 2024

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855164B2Dec 26, 2023

Semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11348837B2May 31, 2022

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11282933B2Mar 22, 2022

FinFET having a work function material gradient

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12068393B2Aug 20, 2024

Etching back and selective deposition of metal gate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11984356B2May 14, 2024

Contact structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11489056B2Nov 1, 2022

Semiconductor device with multi-threshold gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10269912B2Apr 23, 2019

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9887090B2Feb 6, 2018

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9449828B2Sep 20, 2016

Method of forming metal gate electrode

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

NAT SEMICONDUCTOR CORP

8 patents

LIM PENG-SOON

6 patents

TAIWAN SEMICONDUCTOR MFG

6 patents

LI FELIX C

2 patents

MASUOKA YURI

1 patent

HOU CHENG-HAO

1 patent

LIN SHUN WU

1 patent

NG MELISSA MEI CHING

1 patent