Inventor
LIM PENG SOON
MY50 patents
⚠️ This page may combine multiple inventors who share the name “LIM PENG SOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
24 patentsUS11380774B2Jul 5, 2022
Etching back and selective deposition of metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11018232B2May 25, 2021
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10879370B2Dec 29, 2020
Etching back and selective deposition of metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10707131B2Jul 7, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9941373B2Apr 10, 2018
Metal gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9478623B2Oct 25, 2016
Metal gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9449832B2Sep 20, 2016
Metal gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9431505B2Aug 30, 2016
Method of making a gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US12107134B2Oct 1, 2024
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10665685B2May 26, 2020
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10651283B2May 12, 2020
Metal gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11227929B2Jan 18, 2022
Metal gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12336269B2Jun 17, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12283616B2Apr 22, 2025
FinFET having a work function material gradient
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11915981B2Feb 27, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855164B2Dec 26, 2023
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11348837B2May 31, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11282933B2Mar 22, 2022
FinFET having a work function material gradient
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12068393B2Aug 20, 2024
Etching back and selective deposition of metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11984356B2May 14, 2024
Contact structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11489056B2Nov 1, 2022
Semiconductor device with multi-threshold gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10269912B2Apr 23, 2019
Metal gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9887090B2Feb 6, 2018
Metal gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9449828B2Sep 20, 2016
Method of forming metal gate electrode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
NAT SEMICONDUCTOR CORP
8 patentsUS7714418B2May 11, 2010
Leadframe panel
NAT SEMICONDUCTOR CORP64 citations95
US8030138B1Oct 4, 2011
Methods and systems of packaging integrated circuits
NAT SEMICONDUCTOR CORP14 citations82
US7838980B1Nov 23, 2010
TO263 device package having low moisture sensitivity
NAT SEMICONDUCTOR CORP14 citations82
US7763958B1Jul 27, 2010
Leadframe panel for power packages
NAT SEMICONDUCTOR CORP15 citations82
US7582954B1Sep 1, 2009
Optical leadless leadframe package
NAT SEMICONDUCTOR CORP11 citations82
US7342297B1Mar 11, 2008
Sawn power package
NAT SEMICONDUCTOR CORP6 citations70
US7470978B2Dec 30, 2008
Sawn power package and method of fabricating same
NAT SEMICONDUCTOR CORP1 citations48
US7868433B2Jan 11, 2011
Low stress cavity package
NAT SEMICONDUCTOR CORP0 citations40
LIM PENG-SOON
6 patentsUS8278173B2Oct 2, 2012
Method of fabricating gate structures
LIM PENG-SOON34 citations92
US9048334B2Jun 2, 2015
Metal gate structure
LIM PENG-SOON4 citations84
US8193081B2Jun 5, 2012
Method and system for metal gate formation with wider metal gate fill margin
LIM PENG-SOON6 citations82
US8779530B2Jul 15, 2014
Metal gate structure of a field effect transistor
LIM PENG-SOON3 citations62
US8441107B2May 14, 2013
Gate structures
LIM PENG-SOON0 citations52
US8716785B2May 6, 2014
Method and system for metal gate formation with wider metal gate fill margin
LIM PENG-SOON0 citations50
TAIWAN SEMICONDUCTOR MFG
6 patentsUS7871915B2Jan 18, 2011
Method for forming metal gates in a gate last process
TAIWAN SEMICONDUCTOR MFG38 citations92
US7824990B2Nov 2, 2010
Multi-metal-oxide high-K gate dielectrics
TAIWAN SEMICONDUCTOR MFG25 citations91
US8575727B2Nov 5, 2013
Gate structures
TAIWAN SEMICONDUCTOR MFG10 citations84
US7465634B2Dec 16, 2008
Method of forming integrated circuit devices having n-MOSFET and p-MOSFET transistors with elevated and silicided source/drain structures
TAIWAN SEMICONDUCTOR MFG14 citations83
US9129953B2Sep 8, 2015
Method of making a gate structure
TAIWAN SEMICONDUCTOR MFG1 citations63
US9196691B2Nov 24, 2015
Metal gate electrode of a field effect transistor
TAIWAN SEMICONDUCTOR MFG0 citations52