Inventor
BHAT RAJARAM
US30 patents
⚠️ This page may combine multiple inventors who share the name “BHAT RAJARAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
BELL COMMUNICATIONS RES
14 patentsUS5226383AJul 13, 1993
Gas foil rotating substrate holder
BELL COMMUNICATIONS RES564 citations99
US5207864AMay 4, 1993
Low-temperature fusion of dissimilar semiconductors
BELL COMMUNICATIONS RES133 citations98
US5381434AJan 10, 1995
High-temperature, uncooled diode laser
BELL COMMUNICATIONS RES65 citations96
US4931132AJun 5, 1990
Optical control of deposition of crystal monolayers
BELL COMMUNICATIONS RES157 citations94
US5541949AJul 30, 1996
Strained algainas quantum-well diode lasers
BELL COMMUNICATIONS RES30 citations93
US5065200ANov 12, 1991
Geometry dependent doping and electronic devices produced thereby
BELL COMMUNICATIONS RES27 citations93
US5882951AMar 16, 1999
Method for making InP-based lasers with reduced blue shifts
BELL COMMUNICATIONS RES34 citations92
US5796902AAug 18, 1998
Coherent blue/green optical source and other structures utilizing non-linear optical waveguide with quasi-phase-matching grating
BELL COMMUNICATIONS RES69 citations92
US5771256AJun 23, 1998
InP-based lasers with reduced blue shifts
BELL COMMUNICATIONS RES28 citations92
US5323416AJun 21, 1994
Planarized interference mirror
BELL COMMUNICATIONS RES36 citations92
US5288327AFeb 22, 1994
Deflected flow in chemical vapor deposition cell
BELL COMMUNICATIONS RES43 citations92
US5802232ASep 1, 1998
Bonded structure with portions of differing crystallographic orientations, particularly useful as a non linear optical waveguide
BELL COMMUNICATIONS RES14 citations71
US5302847AApr 12, 1994
Semiconductor heterostructure having a capping layer preventing deleterious effects of As-P exchange
BELL COMMUNICATIONS RES2 citations58
US5246878ASep 21, 1993
Capping layer preventing deleterious effects of As--P exchange
BELL COMMUNICATIONS RES4 citations58
CORNING INC
7 patentsUS6933539B1Aug 23, 2005
Tunnel junctions for long-wavelength VCSELs
CORNING INC16 citations92
US8379684B1Feb 19, 2013
Hole blocking layers in non-polar and semi-polar green light emitting devices
CORNING INC15 citations84
US8358673B2Jan 22, 2013
Strain balanced laser diode
CORNING INC6 citations73
US7983317B2Jul 19, 2011
MQW laser structure comprising plural MQW regions
CORNING INC3 citations60
US7615389B2Nov 10, 2009
GaN lasers on ALN substrates and methods of fabrication
CORNING INC4 citations60
US7965752B1Jun 21, 2011
Native green laser semiconductor devices
CORNING INC3 citations59
US8355422B2Jan 15, 2013
Enhanced planarity in GaN edge emitting lasers
CORNING INC0 citations52
BHAT RAJARAM
5 patentsUS8217498B2Jul 10, 2012
Gallium nitride semiconductor device on SOI and process for making same
BHAT RAJARAM2 citations60
US8218595B2Jul 10, 2012
Enhanced planarity in GaN edge emitting lasers
BHAT RAJARAM0 citations51
US8121165B2Feb 21, 2012
MQW laser structure comprising plural MQW regions
BHAT RAJARAM0 citations48
US8318515B2Nov 27, 2012
Growth methodology for light emitting semiconductor devices
BHAT RAJARAM0 citations40
US8189639B2May 29, 2012
GaN-based laser diodes with misfit dislocations displaced from the active region
BHAT RAJARAM0 citations38