Inventor
REICHEL CARSTEN
DE16 patents
⚠️ This page may combine multiple inventors who share the name “REICHEL CARSTEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KRONHOLZ STEPHAN
5 patentsUS8247282B2Aug 21, 2012
Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process
KRONHOLZ STEPHAN6 citations82
US8293596B2Oct 23, 2012
Formation of a channel semiconductor alloy by depositing a hard mask for the selective epitaxial growth
KRONHOLZ STEPHAN4 citations61
US8609482B2Dec 17, 2013
Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process
KRONHOLZ STEPHAN0 citations50
US8518784B2Aug 27, 2013
Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustment
KRONHOLZ STEPHAN0 citations41
US8283225B2Oct 9, 2012
Enhancing selectivity during formation of a channel semiconductor alloy by a wet oxidation process
KRONHOLZ STEPHAN0 citations35
BOEHRINGER INGELHEIM INT
4 patentsUS7960546B2Jun 14, 2011
Process for preparing aminocrotonylamino-substituted quinazoline derivatives
BOEHRINGER INGELHEIM INT33 citations90
US11046648B2Jun 29, 2021
Transition metal-catalyzed protodecarboxylation of α-halo-acrylic acid derivatives
BOEHRINGER INGELHEIM INT0 citations55
US10654803B2May 19, 2020
Transition metal-catalyzed protodecarboxylation of alpha-halo-acrylic acid derivatives
BOEHRINGER INGELHEIM INT0 citations45
US10252994B2Apr 9, 2019
Transition metal-catalyzed protocarboxylation of α-halo-acrylic acid derivatives
BOEHRINGER INGELHEIM INT0 citations45
GLOBALFOUNDRIES INC
2 patentsUS9064961B2Jun 23, 2015
Integrated circuits including epitaxially grown strain-inducing fills doped with boron for improved robustness from delimination and methods for fabricating the same
GLOBALFOUNDRIES INC3 citations60
US8674416B2Mar 18, 2014
Semiconductor device with reduced threshold variability having a threshold adjusting semiconductor alloy in the device active region
GLOBALFOUNDRIES INC0 citations51