Inventor
LEE SUNG-YOUNG
KR75 patents
⚠️ This page may combine multiple inventors who share the name “LEE SUNG-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
37 patentsUS7402483B2Jul 22, 2008
Methods of forming a multi-bridge-channel MOSFET
SAMSUNG ELECTRONICS CO LTD284 citations99
US7253060B2Aug 7, 2007
Gate-all-around type of semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD56 citations96
US7989296B2Aug 2, 2011
Semiconductor device and method of manufacturing same
SAMSUNG ELECTRONICS CO LTD20 citations93
US7696046B2Apr 13, 2010
Method of manufacturing a semiconductor device having a multi-channel type MOS transistor
SAMSUNG ELECTRONICS CO LTD21 citations93
US7588977B2Sep 15, 2009
Method of fabricating a MOS field effect transistor having plurality of channels
SAMSUNG ELECTRONICS CO LTD25 citations93
US7396726B2Jul 8, 2008
Methods of fabricating surrounded-channel transistors with directionally etched gate or insulator formation regions
SAMSUNG ELECTRONICS CO LTD21 citations93
US7285466B2Oct 23, 2007
Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels
SAMSUNG ELECTRONICS CO LTD28 citations92
US7122431B2Oct 17, 2006
Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions
SAMSUNG ELECTRONICS CO LTD20 citations92
US7943998B2May 17, 2011
Nonvolatile memory devices having stacked structures and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7800172B2Sep 21, 2010
Methods of forming semiconductor devices having multiple channel MOS transistors and related intermediate structures
SAMSUNG ELECTRONICS CO LTD14 citations84
US7781290B2Aug 24, 2010
Complementary metal-oxide semiconductor (CMOS) devices including a thin-body channel and dual gate dielectric layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7473963B2Jan 6, 2009
Metal oxide semiconductor (MOS) transistors having three dimensional channels
SAMSUNG ELECTRONICS CO LTD8 citations84
US7316968B2Jan 8, 2008
Methods of forming semiconductor devices having multiple channel MOS transistors
SAMSUNG ELECTRONICS CO LTD9 citations84
US7265031B2Sep 4, 2007
Methods of fabricating semiconductor-on-insulator (SOI) substrates and semiconductor devices using sacrificial layers and void spaces
SAMSUNG ELECTRONICS CO LTD10 citations84
US10201102B2Feb 5, 2019
Electronic device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations82
US9625949B2Apr 18, 2017
Electronic device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations82
US8344367B2Jan 1, 2013
Molecular devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations82
US7573739B2Aug 11, 2009
Multi-bit electromechanical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD17 citations82
US7795687B2Sep 14, 2010
MOS field effect transistor having plurality of channels
SAMSUNG ELECTRONICS CO LTD7 citations74
US7704808B2Apr 27, 2010
Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts
SAMSUNG ELECTRONICS CO LTD5 citations74
US10314187B2Jun 4, 2019
Storage medium accommodation device and electronic device including the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10462917B2Oct 29, 2019
Electronic device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10694013B2Jun 23, 2020
Electronic device with waterproof structure
SAMSUNG ELECTRONICS CO LTD3 citations70
US10010005B2Jun 26, 2018
Electronic device having waterproof structure
SAMSUNG ELECTRONICS CO LTD5 citations68
US9736282B2Aug 15, 2017
Electronic device having through-hole formed therein
SAMSUNG ELECTRONICS CO LTD3 citations68
US8017461B2Sep 13, 2011
Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts
SAMSUNG ELECTRONICS CO LTD4 citations63
US7897463B2Mar 1, 2011
Methods of fabricating vertical twin-channel transistors
SAMSUNG ELECTRONICS CO LTD6 citations63
US7883969B2Feb 8, 2011
Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7821821B2Oct 26, 2010
Multibit electro-mechanical device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7791936B2Sep 7, 2010
Multibit electro-mechanical memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7790494B2Sep 7, 2010
Method of fabricating a multi-bit electro-mechanical memory device
SAMSUNG ELECTRONICS CO LTD6 citations63
US7719068B2May 18, 2010
Multi-bit electro-mechanical memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7709356B2May 4, 2010
Methods of forming a pattern and methods of manufacturing a memory device using the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7541645B2Jun 2, 2009
Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions
SAMSUNG ELECTRONICS CO LTD4 citations63
US7511998B2Mar 31, 2009
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7037768B2May 2, 2006
Methods of etching intermediate silicon germanium layers using ion implantation to promote selectivity
SAMSUNG ELECTRONICS CO LTD5 citations63
US6271105B1Aug 7, 2001
Method of forming multiple wells in a semiconductor integrated circuit using fewer photolithography steps
SAMSUNG ELECTRONICS CO LTD6 citations61
YUN EUN-JUNG
3 patentsUS8129800B2Mar 6, 2012
Gate-all-around integrated circuit devices
YUN EUN-JUNG25 citations92
US8835993B2Sep 16, 2014
Gate-all-around integrated circuit devices
YUN EUN-JUNG2 citations62
US8222067B2Jul 17, 2012
Method of manufacturing multibit electro-mechanical memory device having movable electrode
YUN EUN-JUNG2 citations61
WOORY IND CO LTD
2 patentsOH CHANG-WOO
1 patentKIM MIN-SANG
1 patentHYUNDAI MOTOR CO LTD
1 patentUNIV-INDUSTRY COOP GROUP OF KYUNG HEE UNIV
1 patentPOSCO
1 patentLEE SUNG-YOUNG
1 patentUNIV INDUSTRY COOP GRP OF KYUNG HEE UNIV
1 patentHONG YOUNG-HO
1 patentShowing the top 50 of 75 patents by PatentIndex Score.