P

Inventor

LEE SUNG-YOUNG

KR75 patents
⚠️ This page may combine multiple inventors who share the name “LEE SUNG-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

37 patents
US7402483B2Jul 22, 2008

Methods of forming a multi-bridge-channel MOSFET

SAMSUNG ELECTRONICS CO LTD284 citations99
US7253060B2Aug 7, 2007

Gate-all-around type of semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD56 citations96
US7989296B2Aug 2, 2011

Semiconductor device and method of manufacturing same

SAMSUNG ELECTRONICS CO LTD20 citations93
US7696046B2Apr 13, 2010

Method of manufacturing a semiconductor device having a multi-channel type MOS transistor

SAMSUNG ELECTRONICS CO LTD21 citations93
US7588977B2Sep 15, 2009

Method of fabricating a MOS field effect transistor having plurality of channels

SAMSUNG ELECTRONICS CO LTD25 citations93
US7396726B2Jul 8, 2008

Methods of fabricating surrounded-channel transistors with directionally etched gate or insulator formation regions

SAMSUNG ELECTRONICS CO LTD21 citations93
US7285466B2Oct 23, 2007

Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels

SAMSUNG ELECTRONICS CO LTD28 citations92
US7122431B2Oct 17, 2006

Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions

SAMSUNG ELECTRONICS CO LTD20 citations92
US7943998B2May 17, 2011

Nonvolatile memory devices having stacked structures and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7800172B2Sep 21, 2010

Methods of forming semiconductor devices having multiple channel MOS transistors and related intermediate structures

SAMSUNG ELECTRONICS CO LTD14 citations84
US7781290B2Aug 24, 2010

Complementary metal-oxide semiconductor (CMOS) devices including a thin-body channel and dual gate dielectric layers and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7473963B2Jan 6, 2009

Metal oxide semiconductor (MOS) transistors having three dimensional channels

SAMSUNG ELECTRONICS CO LTD8 citations84
US7316968B2Jan 8, 2008

Methods of forming semiconductor devices having multiple channel MOS transistors

SAMSUNG ELECTRONICS CO LTD9 citations84
US7265031B2Sep 4, 2007

Methods of fabricating semiconductor-on-insulator (SOI) substrates and semiconductor devices using sacrificial layers and void spaces

SAMSUNG ELECTRONICS CO LTD10 citations84
US10201102B2Feb 5, 2019

Electronic device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations82
US9625949B2Apr 18, 2017

Electronic device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations82
US8344367B2Jan 1, 2013

Molecular devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations82
US7573739B2Aug 11, 2009

Multi-bit electromechanical memory devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD17 citations82
US7795687B2Sep 14, 2010

MOS field effect transistor having plurality of channels

SAMSUNG ELECTRONICS CO LTD7 citations74
US7704808B2Apr 27, 2010

Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts

SAMSUNG ELECTRONICS CO LTD5 citations74
US10314187B2Jun 4, 2019

Storage medium accommodation device and electronic device including the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US10462917B2Oct 29, 2019

Electronic device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US10694013B2Jun 23, 2020

Electronic device with waterproof structure

SAMSUNG ELECTRONICS CO LTD3 citations70
US10010005B2Jun 26, 2018

Electronic device having waterproof structure

SAMSUNG ELECTRONICS CO LTD5 citations68
US9736282B2Aug 15, 2017

Electronic device having through-hole formed therein

SAMSUNG ELECTRONICS CO LTD3 citations68
US8017461B2Sep 13, 2011

Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts

SAMSUNG ELECTRONICS CO LTD4 citations63
US7897463B2Mar 1, 2011

Methods of fabricating vertical twin-channel transistors

SAMSUNG ELECTRONICS CO LTD6 citations63
US7883969B2Feb 8, 2011

Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7821821B2Oct 26, 2010

Multibit electro-mechanical device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7791936B2Sep 7, 2010

Multibit electro-mechanical memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7790494B2Sep 7, 2010

Method of fabricating a multi-bit electro-mechanical memory device

SAMSUNG ELECTRONICS CO LTD6 citations63
US7719068B2May 18, 2010

Multi-bit electro-mechanical memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7709356B2May 4, 2010

Methods of forming a pattern and methods of manufacturing a memory device using the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7541645B2Jun 2, 2009

Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions

SAMSUNG ELECTRONICS CO LTD4 citations63
US7511998B2Mar 31, 2009

Non-volatile memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7037768B2May 2, 2006

Methods of etching intermediate silicon germanium layers using ion implantation to promote selectivity

SAMSUNG ELECTRONICS CO LTD5 citations63
US6271105B1Aug 7, 2001

Method of forming multiple wells in a semiconductor integrated circuit using fewer photolithography steps

SAMSUNG ELECTRONICS CO LTD6 citations61

YUN EUN-JUNG

3 patents

WOORY IND CO LTD

2 patents

OH CHANG-WOO

1 patent

KIM MIN-SANG

1 patent

HYUNDAI MOTOR CO LTD

1 patent

UNIV-INDUSTRY COOP GROUP OF KYUNG HEE UNIV

1 patent

POSCO

1 patent

LEE SUNG-YOUNG

1 patent

UNIV INDUSTRY COOP GRP OF KYUNG HEE UNIV

1 patent

HONG YOUNG-HO

1 patent

Showing the top 50 of 75 patents by PatentIndex Score.