P

Inventor

CHOI YANG-KYU

KR70 patents
⚠️ This page may combine multiple inventors who share the name “CHOI YANG-KYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOREA ADVANCED INST SCI & TECH

18 patents
US8008706B2Aug 30, 2011

Non-volatile memory cell and non-volatile memory cell array with minimized influence from neighboring cells

KOREA ADVANCED INST SCI & TECH19 citations93
US7402862B2Jul 22, 2008

Multi-bit non-volatile memory device having a dual-gate and method of manufacturing the same, and method of multi-bit cell operation

KOREA ADVANCED INST SCI & TECH29 citations91
US7749801B2Jul 6, 2010

Phase change memory device using carbon nanotube and method for fabricating the same

KOREA ADVANCED INST SCI & TECH12 citations84
US7741664B2Jun 22, 2010

Complementary metal oxide semiconductor image sensor and method for fabricating the same

KOREA ADVANCED INST SCI & TECH16 citations84
US7744947B2Jun 29, 2010

Method of forming carbon nanotube on semiconductor substrate, method of forming semiconductor metal wire using the same, and method of fabricating inductor using the same

KOREA ADVANCED INST SCI & TECH8 citations82
US7419857B2Sep 2, 2008

Method for manufacturing field effect transistor having channel consisting of silicon fins and silicon body and transistor structure manufactured thereby

KOREA ADVANCED INST SCI & TECH14 citations82
US9906170B2Feb 27, 2018

Triboelectric energy harvester including coating electrification layer and manufacturing method thereof

KOREA ADVANCED INST SCI & TECH9 citations79
US10956622B2Mar 23, 2021

Thermal hardware-based data security device that permanently erases data by using local heat generation phenomenon and method thereof

KOREA ADVANCED INST SCI & TECH2 citations73
US9997596B2Jun 12, 2018

Tunneling field-effect transistor with a plurality of nano-wires and fabrication method thereof

KOREA ADVANCED INST SCI & TECH2 citations73
US9728539B2Aug 8, 2017

Multi bit capacitorless DRAM and manufacturing method thereof

KOREA ADVANCED INST SCI & TECH2 citations69
US11322613B2May 3, 2022

Structure and operation method of transistor acting as a neuron in neuromorphic system, and a neuromorphic system using it

KOREA ADVANCED INST SCI & TECH2 citations64
US10636810B2Apr 28, 2020

Vertically-integrated 3-dimensional flash memory for high reliable flash memory and fabrication method thereof

KOREA ADVANCED INST SCI & TECH1 citations63
US11869950B2Jan 9, 2024

Steep-slope field-effect transistor and fabrication method thereof

KOREA ADVANCED INST SCI & TECH0 citations62
US11031467B2Jun 8, 2021

Field effect transistor based on vertically integrated gate-all-round multiple nanowire channels

KOREA ADVANCED INST SCI & TECH0 citations62
US11329157B2May 10, 2022

Two-terminal biristor with polysilicon emitter layer and method of manufacturing the same

KOREA ADVANCED INST SCI & TECH0 citations54
US10665671B2May 26, 2020

Junctionless transistor based on vertically integrated gate-all-round multiple nanowire channels and method of manufacturing the same

KOREA ADVANCED INST SCI & TECH0 citations52
US10084128B2Sep 25, 2018

Method for increasing driving current of junctionless transistor

KOREA ADVANCED INST SCI & TECH0 citations52
US11922988B2Mar 5, 2024

Dynamic random access memory device with long retention and operating method thereof

KOREA ADVANCED INST SCI & TECH0 citations51

SK INNOVATION CO LTD

9 patents

KOREA INST SCI & TECH

4 patents

KOREA RES INST OF BIOSCIENCE

4 patents

LG CHEMICAL LTD

4 patents

SK ON CO LTD

4 patents

HYUNDAI ELECTRONICS IND

2 patents

UNIV CALIFORNIA

1 patent

SAMSUNG ELECTRONICS CO LTD

1 patent

ZHU JI

1 patent

KOREA RES INST OF BIOSCIENCE &

1 patent

PARK DONG-GUN

1 patent

Showing the top 50 of 70 patents by PatentIndex Score.