Inventor
CAMERON THOMAS M
US30 patents
⚠️ This page may combine multiple inventors who share the name “CAMERON THOMAS M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ENTEGRIS INC
10 patentsUS11358975B2Jun 14, 2022
Process for preparing organotin compounds
ENTEGRIS INC15 citations93
US11685752B2Jun 27, 2023
Process for preparing organotin compounds
ENTEGRIS INC8 citations85
US9534285B2Jan 3, 2017
Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
ENTEGRIS INC3 citations73
US9443736B2Sep 13, 2016
Silylene compositions and methods of use thereof
ENTEGRIS INC4 citations71
US12297217B2May 13, 2025
Process for preparing organotin compounds
ENTEGRIS INC0 citations62
US12221691B2Feb 11, 2025
Organotin precursor compounds
ENTEGRIS INC0 citations61
US11203604B2Dec 21, 2021
Preparation of triiodosilanes
ENTEGRIS INC0 citations61
US12459824B2Nov 4, 2025
Method of preparing iodosilanes and compositions therefrom
ENTEGRIS INC0 citations59
US10870921B2Dec 22, 2020
Cyclopentadienyl titanium alkoxides with ozone activated ligands for ALD of TiO2
ENTEGRIS INC0 citations52
US9929014B2Mar 27, 2018
Dopant precursors for mono-layer doping
ENTEGRIS INC1 citations52
KOMATSU AMERICA INT COMPANY
5 patentsUSD427613SJul 4, 2000
Instrument panel
KOMATSU AMERICA INT COMPANY50 citations93
USD427207SJun 27, 2000
Right hand armrest
KOMATSU AMERICA INT COMPANY49 citations93
USD428022SJul 11, 2000
Dash cowl
KOMATSU AMERICA INT COMPANY35 citations90
USD427208SJun 27, 2000
Left hand armrest
KOMATSU AMERICA INT COMPANY32 citations90
USD413590SSep 7, 1999
Joystick
KOMATSU AMERICA INT COMPANY6 citations71
XU CHONGYING
4 patentsUS8206784B2Jun 26, 2012
Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
XU CHONGYING8 citations83
US8784936B2Jul 22, 2014
Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
XU CHONGYING2 citations61
US8663735B2Mar 4, 2014
In situ generation of RuO4 for ALD of Ru and Ru related materials
XU CHONGYING0 citations51
US8524931B2Sep 3, 2013
Precursor compositions for ALD/CVD of group II ruthenate thin films
XU CHONGYING0 citations51