P

Inventor

KURODA HIDEAKI

JP46 patents
⚠️ This page may combine multiple inventors who share the name “KURODA HIDEAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SONY CORP

20 patents
US6147383ANov 14, 2000

LDD buried channel field effect semiconductor device and manufacturing method

SONY CORP149 citations98
US5459093AOct 17, 1995

Method for forming dummy pattern in a semiconductor device

SONY CORP120 citations98
US5518946AMay 21, 1996

Process for fabricating capacitors in dynamic RAM

SONY CORP68 citations96
US6583490B2Jun 24, 2003

One time programmable semiconductor nonvolatile memory device and method for production of same

SONY CORP20 citations92
US6359301B1Mar 19, 2002

Semiconductor device and method of manufacturing the same

SONY CORP45 citations92
US6001698ADec 14, 1999

MOS transistor and fabrication process for the same

SONY CORP25 citations92
US5986312ANov 16, 1999

Field effect semiconductor device having improved connections

SONY CORP29 citations92
US5825059AOct 20, 1998

Semiconductor device and an interconnection structure of same

SONY CORP30 citations92
US5329482AJul 12, 1994

Semiconductor memory device and method for producing it

SONY CORP40 citations92
US8362565B2Jan 29, 2013

Memory element with small threshold voltage variance and high-speed logic element with low power consumption

SONY CORP8 citations84
US6696351B1Feb 24, 2004

Semiconductor device having a selectively deposited conductive layer

SONY CORP11 citations74
US6255685B1Jul 3, 2001

Semiconductor device and method of manufacturing the same

SONY CORP10 citations74
US6093950AJul 25, 2000

Semiconductor device having various threshold voltages and manufacturing same

SONY CORP13 citations74
US5910671AJun 8, 1999

Semiconductor device having various threshold voltages and manufacturing same

SONY CORP5 citations74
US5580805ADec 3, 1996

Semiconductor device having various threshold voltages and manufacturing same

SONY CORP10 citations74
US5374579ADec 20, 1994

Method of fabricating a semiconductor DRAM

SONY CORP12 citations74
US5332687AJul 26, 1994

Method of manufacturing a semiconductor memory having a memory cell array and a peripheral circuit portion so as to improve the characteristics of the device

SONY CORP12 citations74
US6800527B2Oct 5, 2004

One time programmable semiconductor nonvolatile memory device and method for production of same

SONY CORP8 citations73
US5346843ASep 13, 1994

Method of manufacturing a semiconductor device having a memory cell and peripheral circuit including forming a first electrode for the capacitor

SONY CORP3 citations63
US5241200AAug 31, 1993

Semiconductor memory and method of fabricating the same

SONY CORP4 citations63

OTSUKA PHARMA CO LTD

10 patents

KURODA HIDEAKI

4 patents

MURATA MANUFACTURING CO

4 patents

YAMASHITA HIROSHI

4 patents

MURATA MFG CO LLP

1 patent

TOSHIBA KK

1 patent

GOTO FUMITAKA

1 patent

KOMORI PRINTING MACH

1 patent