P

Inventor

LEE SANG-BO

KR38 patents
⚠️ This page may combine multiple inventors who share the name “LEE SANG-BO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

32 patents
US6282128B1Aug 28, 2001

Integrated circuit memory devices having multiple data rate mode capability and methods of operating same

SAMSUNG ELECTRONICS CO LTD44 citations96
US6094375AJul 25, 2000

Integrated circuit memory devices having multiple data rate mode capability and methods of operating same

SAMSUNG ELECTRONICS CO LTD63 citations96
US5920511AJul 6, 1999

High-speed data input circuit for a synchronous memory device

SAMSUNG ELECTRONICS CO LTD58 citations96
US5748543AMay 5, 1998

Self repairing integrated circuit memory devices and methods

SAMSUNG ELECTRONICS CO LTD79 citations96
US5701268ADec 23, 1997

Sense amplifier for integrated circuit memory devices having boosted sense and current drive capability and methods of operating same

SAMSUNG ELECTRONICS CO LTD91 citations96
US6625242B1Sep 23, 2003

Delay locked loops and methods that shift the phase of a delayed clock signal based on a reference phase value

SAMSUNG ELECTRONICS CO LTD36 citations93
US7038963B2May 2, 2006

Current sense amplifier circuits having a bias voltage node for adjusting input resistance

SAMSUNG ELECTRONICS CO LTD45 citations92
US6914829B2Jul 5, 2005

Multi-stage output multiplexing circuits and methods for double data rate synchronous memory devices

SAMSUNG ELECTRONICS CO LTD26 citations92
US5638333AJun 10, 1997

Bit line sensing circuit and method of a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD41 citations92
US6329854B1Dec 11, 2001

Phase locked loop integrated circuits having dynamic phase locking characteristics and methods of operating same

SAMSUNG ELECTRONICS CO LTD24 citations86
US10101874B2Oct 16, 2018

Apparatus and method for controlling user interface to select object within image and image input device

SAMSUNG ELECTRONICS CO LTD18 citations85
US9594945B2Mar 14, 2017

Method and apparatus for protecting eyesight

SAMSUNG ELECTRONICS CO LTD13 citations84
US8917564B2Dec 23, 2014

Three-dimensional semiconductor memory device having compensating data skewing according to interlayer timing delay and method of de-skewing data therein

SAMSUNG ELECTRONICS CO LTD5 citations84
US7855926B2Dec 21, 2010

Semiconductor memory device having local sense amplifier with on/off control

SAMSUNG ELECTRONICS CO LTD9 citations84
US7292486B2Nov 6, 2007

Methods and circuits for latency control in accessing memory devices

SAMSUNG ELECTRONICS CO LTD11 citations84
US6944091B2Sep 13, 2005

Latency control circuit and method of latency control

SAMSUNG ELECTRONICS CO LTD12 citations84
US6232813B1May 15, 2001

Phase locked loop integrated circuits having fuse-enabled and fuse-disabled delay devices therein

SAMSUNG ELECTRONICS CO LTD18 citations84
US7065003B2Jun 20, 2006

Latency control circuit and method of latency control

SAMSUNG ELECTRONICS CO LTD8 citations74
US6356489B2Mar 12, 2002

Integrated circuit memory devices having circuits therein that preserve minimum /RAS TO /CAS Delays

SAMSUNG ELECTRONICS CO LTD9 citations74
US5777934AJul 7, 1998

Semiconductor memory device with variable plate voltage generator

SAMSUNG ELECTRONICS CO LTD8 citations74
US10171790B2Jan 1, 2019

Depth sensor, image capture method, and image processing system using depth sensor

SAMSUNG ELECTRONICS CO LTD2 citations73
US9838573B2Dec 5, 2017

Method for guiding controller to move to within recognizable range of multimedia apparatus, the multimedia apparatus, and target tracking apparatus thereof

SAMSUNG ELECTRONICS CO LTD6 citations72
US9436545B2Sep 6, 2016

Semiconducotr memory device including non-volatile memory cell array

SAMSUNG ELECTRONICS CO LTD2 citations63
US7423896B2Sep 9, 2008

Local sense amplifier in memory device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7366822B2Apr 29, 2008

Semiconductor memory device capable of reading and writing data at the same time

SAMSUNG ELECTRONICS CO LTD6 citations63
US7236414B2Jun 26, 2007

Local sense amplifier in memory device

SAMSUNG ELECTRONICS CO LTD4 citations63
US7219026B2May 15, 2007

Frequency measuring circuits including charge pumps and related memory devices and methods

SAMSUNG ELECTRONICS CO LTD2 citations63
US10186045B2Jan 22, 2019

Methods of and apparatuses for recognizing motion of objects, and associated systems

SAMSUNG ELECTRONICS CO LTD1 citations62
US7298667B2Nov 20, 2007

Latency control circuit and method of latency control

SAMSUNG ELECTRONICS CO LTD6 citations62
US9858981B2Jan 2, 2018

Semiconductor memory devices including redundancy memory cells

SAMSUNG ELECTRONICS CO LTD0 citations51
US9524770B2Dec 20, 2016

Semiconductor memory devices including redundancy memory cells

SAMSUNG ELECTRONICS CO LTD0 citations51
US9773164B2Sep 26, 2017

Apparatus and method for recognizing human body in hybrid manner

SAMSUNG ELECTRONICS CO LTD0 citations40

YU HAK-SOO

1 patent

KIM KYUNG IL

1 patent

PARK YOON-DONG

1 patent

JIN YOUNG-GU

1 patent

LEE YUN-YOUNG

1 patent

LEE HOON

1 patent