Inventor
CHO IN-WOOK
KR18 patents
Patents
18 patentsUS6815764B2Nov 9, 2004
Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD71 citations98
US7179709B2Feb 20, 2007
Method of fabricating non-volatile memory device having local SONOS gate structure
SAMSUNG ELECTRONICS CO LTD13 citations84
US7045850B2May 16, 2006
Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US7184316B2Feb 27, 2007
Non-volatile memory cell array having common drain lines and method of operating the same
SAMSUNG ELECTRONICS CO LTD11 citations83
US6998309B2Feb 14, 2006
Method of manufacturing a non-volatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD8 citations74
US7420243B2Sep 2, 2008
Non-volatile memory device with buried control gate and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations73
US7361560B2Apr 22, 2008
Method of manufacturing a dielectric layer in a memory device that includes nitriding step
SAMSUNG ELECTRONICS CO LTD8 citations73
US7371640B2May 13, 2008
Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7320920B2Jan 22, 2008
Non-volatile flash memory device having at least two different channel concentrations and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7129591B2Oct 31, 2006
Semiconductor device having align key and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7060563B2Jun 13, 2006
Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7473961B2Jan 6, 2009
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7932154B2Apr 26, 2011
Method of fabricating non-volatile flash memory device having at least two different channel concentrations
SAMSUNG ELECTRONICS CO LTD0 citations52
US7718504B2May 18, 2010
Semiconductor device having align key and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7566928B2Jul 28, 2009
Byte-operational nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7700437B2Apr 20, 2010
Non-volatile memory device with buried control gate and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7345925B2Mar 18, 2008
Soft erasing methods for nonvolatile memory cells
SAMSUNG ELECTRONICS CO LTD1 citations51
US7586137B2Sep 8, 2009
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations41