Inventor
WANG RUNSHENG
CN14 patents
⚠️ This page may combine multiple inventors who share the name “WANG RUNSHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HUANG RU
11 patentsUS9018968B2Apr 28, 2015
Method for testing density and location of gate dielectric layer trap of semiconductor device
HUANG RU17 citations81
US8564031B2Oct 22, 2013
High voltage-resistant lateral double-diffused transistor based on nanowire device
HUANG RU9 citations81
US8513067B2Aug 20, 2013
Fabrication method for surrounding gate silicon nanowire transistor with air as spacers
HUANG RU10 citations81
US8563370B2Oct 22, 2013
Method for fabricating surrounding-gate silicon nanowire transistor with air sidewalls
HUANG RU3 citations60
US8901644B2Dec 2, 2014
Field effect transistor with a vertical channel and fabrication method thereof
HUANG RU2 citations59
US8288238B2Oct 16, 2012
Method for fabricating a tunneling field-effect transistor
HUANG RU5 citations57
US9034702B2May 19, 2015
Method for fabricating silicon nanowire field effect transistor based on wet etching
HUANG RU1 citations51
US8592276B2Nov 26, 2013
Fabrication method of vertical silicon nanowire field effect transistor
HUANG RU1 citations51
US8866507B2Oct 21, 2014
Method for testing trap density of gate dielectric layer in semiconductor device having no substrate contact
HUANG RU1 citations49
US8722312B2May 13, 2014
Method for fabricating semiconductor nano circular ring
HUANG RU0 citations48
US9099500B2Aug 4, 2015
Programmable array of silicon nanowire field effect transistor and method for fabricating the same
HUANG RU0 citations39