Inventor
NANDI DEBALEENA
US5 patents
Patents
5 patentsUS12575170B2Mar 10, 2026
Low temperature, high germanium, high boron SiGe:B pEPI with a silicon rich capping layer for ultra-low PMOS contact resistivity and thermal stability
INTEL CORP0 citations61
US12426342B2Sep 23, 2025
Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability
INTEL CORP0 citations59
US12520573B2Jan 6, 2026
SiGe:GAB source or drain structures with low resistivity
INTEL CORP0 citations58
US12439669B2Oct 7, 2025
Co-deposition of titanium and silicon for improved silicon germanium source and drain contacts
INTEL CORP0 citations58
US12598777B2Apr 7, 2026
Low temperature, high germanium, high boron SiGe:B pEPI with titanium silicide contacts for ultra-low PMOS contact resistivity and thermal stability
INTEL CORP0 citations57