Inventor
SHAH RUSHABH
US6 patents
⚠️ This page may combine multiple inventors who share the name “SHAH RUSHABH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
5 patentsUS12575170B2Mar 10, 2026
Low temperature, high germanium, high boron SiGe:B pEPI with a silicon rich capping layer for ultra-low PMOS contact resistivity and thermal stability
INTEL CORP0 citations61
US12439640B2Oct 7, 2025
Reduced contact resistivity with PMOS germanium and silicon doped with boron gate all around transistors
INTEL CORP0 citations61
US12426342B2Sep 23, 2025
Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability
INTEL CORP0 citations59
US12166124B2Dec 10, 2024
Gate-all-around integrated circuit structures having germanium-doped nanoribbon channel structures
INTEL CORP1 citations54
US12414366B2Sep 9, 2025
Co-integration of high voltage (HV) and low voltage (LV) transistor structures, using channel height and spacing modulation
INTEL CORP0 citations50