Inventor

RAMASWAMY D V NIRMAL

US104 patents

⚠️ This page may combine multiple inventors who share the name “RAMASWAMY D V NIRMAL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RAMASWAMY D V NIRMAL

MICRON TECHNOLOGY INC

Memory structures and related cross-point memory arrays, electronic systems, and methods of forming memory structures

Apparatuses having a ferroelectric field-effect transistor memory array and related method

Three dimensional memory array with select device

Resistive memory elements including buffer materials, and related memory cells, memory devices, electronic systems

Memory cells having ferroelectric materials

Semiconductor constructions, NAND unit cells, methods of forming semiconductor constructions, and methods of forming NAND unit cells

Nanoscale floating gate and methods of formation

Apparatuses having a ferroelectric field-effect transistor memory array and related method

Methods of forming a ferroelectric memory cell

Memory programming methods and memory systems

Memory cells, methods of forming dielectric materials, and methods of forming memory cells

Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells

Apparatuses having a ferroelectric field-effect transistor memory array and related method

Semiconductor devices including ferroelectric materials

Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

Memory cells, memory systems, and memory programming methods

Apparatuses having a ferroelectric field-effect transistor memory array and related method

Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

Semiconductor device structures including ferroelectric memory cells

Memory cell structures

Semiconductor constructions and NAND unit cells

Multi-bit ferroelectric memory device and methods of forming the same

Memory cells and methods of storing information

Memory cells having regions containing one or both of carbon and boron

Memory cells, memory systems, and memory programming methods

Methods of forming nanoscale floating gate

Three dimensional memory array with select device

Memory cells, memory systems, and memory programming methods

Methods of forming memory cells and semiconductor devices

Memory cells, memory systems, and memory programming methods

Semiconductor constructions and NAND unit cells

Resistive memory sensing

Multi-bit ferroelectric memory device and methods of forming the same

Resistive memory elements, resistive memory cells, and resistive memory devices

Switching components and memory units

Charge-retaining transistor, array of memory cells, and methods of forming a charge-retaining transistor

Memory cell structures

RAMASWAMY D V NIRMAL

Select devices including a semiconductive stack having a semiconductive material

Methods of forming resistive memory elements

Methods of forming semiconductor constructions, and methods of forming NAND unit cells

Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses

Memory cells, methods of forming dielectric materials, and methods of forming memory cells

Oxide based memory

Transistor gate forming methods and integrated circuits

SANDHU GURTEJ S

Memory cells and methods of storing information

Nanoscale floating gate

MIN KYU S

Memory cells containing charge-trapping zones

MICRON TECHONOLOGY INC

Ferroelectric memory and methods of forming the same

SILLS SCOTT E

Memory arrays and methods of forming an array of memory cells

WELLS DAVID H

Select devices for memory cell applications