Inventor
PARK YONGSUNG
KR20 patents
⚠️ This page may combine multiple inventors who share the name “PARK YONGSUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG DISPLAY CO LTD
15 patentsUS12334001B2Jun 17, 2025
Display device
SAMSUNG DISPLAY CO LTD2 citations74
US11817043B2Nov 14, 2023
Display device
SAMSUNG DISPLAY CO LTD3 citations72
US10872571B2Dec 22, 2020
Display device
SAMSUNG DISPLAY CO LTD3 citations72
US10629128B2Apr 21, 2020
Display device using a simultaneous emission driving method and pixel included in the display device
SAMSUNG DISPLAY CO LTD3 citations72
US11392230B2Jul 19, 2022
Display device
SAMSUNG DISPLAY CO LTD5 citations71
US11024237B2Jun 1, 2021
Pixel and organic light emitting display device including the same
SAMSUNG DISPLAY CO LTD2 citations71
US9978311B2May 22, 2018
Pixel circuit and display apparatus including the pixel circuit
SAMSUNG DISPLAY CO LTD6 citations71
US12067913B2Aug 20, 2024
Display device and display device repair method
SAMSUNG DISPLAY CO LTD1 citations61
US11436984B2Sep 6, 2022
Pixel and organic light emitting display device having the same
SAMSUNG DISPLAY CO LTD1 citations61
US12484380B2Nov 25, 2025
Display panel
SAMSUNG DISPLAY CO LTD0 citations60
US11099417B2Aug 24, 2021
Electronic display apparatus to mitigate visibility of terminal wiring in non-display area
SAMSUNG DISPLAY CO LTD1 citations60
US11010007B2May 18, 2021
Input sensing panel including a plurality of holes and a display device having the same
SAMSUNG DISPLAY CO LTD1 citations60
US12518692B2Jan 6, 2026
Display device
SAMSUNG DISPLAY CO LTD0 citations51
US12439774B2Oct 7, 2025
Display panel with a repair circuit
SAMSUNG DISPLAY CO LTD0 citations50
US9905163B2Feb 27, 2018
Organic light-emitting display apparatus and method of driving the same
SAMSUNG DISPLAY CO LTD0 citations40
LEE JOONMYOUNG
2 patentsUS10147873B2Dec 4, 2018
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
LEE JOONMYOUNG6 citations82
US9905753B2Feb 27, 2018
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
LEE JOONMYOUNG6 citations82