Inventor
SINGH SUNIL KUMAR
TW34 patents
⚠️ This page may combine multiple inventors who share the name “SINGH SUNIL KUMAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
14 patentsUS9576894B2Feb 21, 2017
Integrated circuits including organic interlayer dielectric layers and methods for fabricating the same
GLOBALFOUNDRIES INC9 citations83
US9524935B2Dec 20, 2016
Filling cavities in an integrated circuit and resulting devices
GLOBALFOUNDRIES INC7 citations76
US10084093B1Sep 25, 2018
Low resistance conductive contacts
GLOBALFOUNDRIES INC6 citations72
US9142451B2Sep 22, 2015
Reduced capacitance interlayer structures and fabrication methods
GLOBALFOUNDRIES INC6 citations69
US9691654B1Jun 27, 2017
Methods and devices for back end of line via formation
GLOBALFOUNDRIES INC3 citations68
US9362162B2Jun 7, 2016
Methods of fabricating BEOL interlayer structures
GLOBALFOUNDRIES INC3 citations68
US10886287B2Jan 5, 2021
Multiple-time programmable (MTP) memory device with a wrap-around control gate
GLOBALFOUNDRIES INC1 citations62
US10580684B2Mar 3, 2020
Self-aligned single diffusion break for fully depleted silicon-on-insulator and method for producing the same
GLOBALFOUNDRIES INC1 citations60
US10672710B2Jun 2, 2020
Interconnect structures with reduced capacitance
GLOBALFOUNDRIES INC0 citations52
US10083904B2Sep 25, 2018
Metholodogy for profile control and capacitance reduction
GLOBALFOUNDRIES INC0 citations52
US9960113B2May 1, 2018
Method to fabricate a high performance capacitor in a back end of line (BEOL)
GLOBALFOUNDRIES INC0 citations52
US9711346B2Jul 18, 2017
Method to fabricate a high performance capacitor in a back end of line (BEOL)
GLOBALFOUNDRIES INC0 citations52
US9741605B2Aug 22, 2017
Reducing defects and improving reliability of BEOL metal fill
GLOBALFOUNDRIES INC0 citations41
US9613909B2Apr 4, 2017
Methods and devices for metal filling processes
GLOBALFOUNDRIES INC0 citations34
TAIWAN SEMICONDUCTOR MFG CO LTD
5 patentsUS10312136B2Jun 4, 2019
Etch damage and ESL free dual damascene metal interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9786549B2Oct 10, 2017
Etch damage and ESL free dual damascene metal interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11171041B2Nov 9, 2021
Etch damage and ESL free dual damascene metal interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9318377B2Apr 19, 2016
Etch damage and ESL free dual damascene metal interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11955376B2Apr 9, 2024
Etch damage and ESL free dual damascene metal interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
4 patentsUS7682963B2Mar 23, 2010
Air gap for interconnect application
TAIWAN SEMICONDUCTOR MFG9 citations84
US9093501B2Jul 28, 2015
Interconnection wires of semiconductor devices
TAIWAN SEMICONDUCTOR MFG3 citations63
US8778794B1Jul 15, 2014
Interconnection wires of semiconductor devices
TAIWAN SEMICONDUCTOR MFG3 citations63
US8901007B2Dec 2, 2014
Addition of carboxyl groups plasma during etching for interconnect reliability enhancement
TAIWAN SEMICONDUCTOR MFG0 citations52
GLOBALFOUNDRIES US INC
4 patentsUS11515205B2Nov 29, 2022
Conductive structures for contacting a top electrode of an embedded memory device and methods of making such contact structures on an IC product
GLOBALFOUNDRIES US INC5 citations71
US12453102B2Oct 21, 2025
Vertical memory devices
GLOBALFOUNDRIES US INC0 citations59
US11367750B2Jun 21, 2022
Vertical memory devices
GLOBALFOUNDRIES US INC0 citations59
US11094585B2Aug 17, 2021
Methods of forming a conductive contact structure to a top electrode of an embedded memory device on an IC product and a corresponding IC product
GLOBALFOUNDRIES US INC0 citations48