Inventor

KAWAMURA CHRISTOPHER J

US33 patents

Patents

33 patents

US10354712B2Jul 16, 2019

Ferroelectric memory cells

MICRON TECHNOLOGY INC70 citations98

US10153018B2Dec 11, 2018

Ferroelectric memory cells

MICRON TECHNOLOGY INC32 citations94

US10074414B2Sep 11, 2018

Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory

MICRON TECHNOLOGY INC23 citations94

US10127965B2Nov 13, 2018

Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory

MICRON TECHNOLOGY INC15 citations92

US11074964B1Jul 27, 2021

Integrated assemblies comprising digit lines configured to have shunted ends during a precharge operation

MICRON TECHNOLOGY INC10 citations85

US11107515B2Aug 31, 2021

Ferroelectric memory cells

MICRON TECHNOLOGY INC6 citations84

US10885964B2Jan 5, 2021

Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory

MICRON TECHNOLOGY INC4 citations84

US10872650B2Dec 22, 2020

Ferroelectric memory cells

MICRON TECHNOLOGY INC8 citations84

US10854276B2Dec 1, 2020

Apparatuses and methods including two transistor-one capacitor memory and for accessing same

MICRON TECHNOLOGY INC7 citations84

US10431283B2Oct 1, 2019

Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory

MICRON TECHNOLOGY INC9 citations84

US10418083B2Sep 17, 2019

Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory

MICRON TECHNOLOGY INC9 citations84

US10127972B2Nov 13, 2018

Apparatuses and methods including two transistor-one capacitor memory and for accessing same

MICRON TECHNOLOGY INC16 citations84

US11967362B2Apr 23, 2024

Pre-sense gut node amplification in sense amplifier

MICRON TECHNOLOGY INC2 citations73

US11706909B2Jul 18, 2023

Integrated assemblies comprising memory cells and shielding material between the memory cells

MICRON TECHNOLOGY INC3 citations73

US11574668B2Feb 7, 2023

Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory

MICRON TECHNOLOGY INC1 citations73

US11443780B2Sep 13, 2022

Vertical access line multiplexor

MICRON TECHNOLOGY INC2 citations73

US11211113B1Dec 28, 2021

Integrated assemblies comprising wordlines having ends selectively shunted to low voltage for speed transitioning

MICRON TECHNOLOGY INC6 citations73

US11205468B2Dec 21, 2021

Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory

MICRON TECHNOLOGY INC2 citations73

US10998031B2May 4, 2021

Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory

MICRON TECHNOLOGY INC2 citations73

US10910379B2Feb 2, 2021

Integrated assemblies comprising memory cells and shielding material between the memory cells, and methods of forming integrated assemblies

MICRON TECHNOLOGY INC2 citations73

US10861787B1Dec 8, 2020

Apparatuses and methods for compensated sense amplifier with cross coupled N-type transistors

MICRON TECHNOLOGY INC0 citations52

US12051460B2Jul 30, 2024

Apparatuses and methods for single-ended sense amplifiers

MICRON TECHNOLOGY INC0 citations52

US10867661B2Dec 15, 2020

Main word line driver circuit

MICRON TECHNOLOGY INC0 citations52

US10535399B2Jan 14, 2020

Memory arrays

MICRON TECHNOLOGY INC0 citations52

US12367919B2Jul 22, 2025

Word line driver circuitry including shared driver gates, and associated methods, devices, and systems

MICRON TECHNOLOGY INC0 citations46

KAWAMURA CHRISTOPHER J

Patents

Ferroelectric memory cells

Ferroelectric memory cells

Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory

Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory

Integrated assemblies comprising digit lines configured to have shunted ends during a precharge operation

Ferroelectric memory cells

Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory

Ferroelectric memory cells

Apparatuses and methods including two transistor-one capacitor memory and for accessing same

Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory

Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory

Apparatuses and methods including two transistor-one capacitor memory and for accessing same

Pre-sense gut node amplification in sense amplifier

Integrated assemblies comprising memory cells and shielding material between the memory cells

Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory

Vertical access line multiplexor

Integrated assemblies comprising wordlines having ends selectively shunted to low voltage for speed transitioning

Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory

Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory

Integrated assemblies comprising memory cells and shielding material between the memory cells, and methods of forming integrated assemblies

Memory device with bitline noise suppressing scheme

Tri-level DRAM sense amplifer

Memory arrays

Dram array architecture with row hammer stress mitigation

Main word line driver circuit

DRAM array architecture with row hammer stress mitigation

Pseudo-non-volatile memory cells

Memory device control schemes, and associated methods, devices, and systems

Apparatuses and methods for compensated sense amplifier with cross coupled N-type transistors

Apparatuses and methods for single-ended sense amplifiers

Main word line driver circuit

Memory arrays

Word line driver circuitry including shared driver gates, and associated methods, devices, and systems