Inventor
NI CHUN-LUNG
TW6 patents
Patents
6 patentsUS9508719B2Nov 29, 2016
Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US10923353B2Feb 16, 2021
Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9515072B2Dec 6, 2016
FinFET structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations61
US12446292B2Oct 14, 2025
Semiconductor device and methods of formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations54
US10510539B2Dec 17, 2019
Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9859404B2Jan 2, 2018
FinFET structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51