Inventor
BROWN KARL M
US33 patents
⚠️ This page may combine multiple inventors who share the name “BROWN KARL M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
13 patentsUS7244344B2Jul 17, 2007
Physical vapor deposition plasma reactor with VHF source power applied through the workpiece
APPLIED MATERIALS INC34 citations96
US7214619B2May 8, 2007
Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece
APPLIED MATERIALS INC36 citations92
US7399943B2Jul 15, 2008
Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
APPLIED MATERIALS INC9 citations84
US7804040B2Sep 28, 2010
Physical vapor deposition plasma reactor with arcing suppression
APPLIED MATERIALS INC10 citations79
US7820020B2Oct 26, 2010
Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
APPLIED MATERIALS INC4 citations74
US10648074B2May 12, 2020
Physical vapor deposition with isotropic neutral and non-isotropic ion velocity distribution at the wafer surface
APPLIED MATERIALS INC2 citations73
US9518326B2Dec 13, 2016
Method for forming an electrostatic chuck using film printing technology
APPLIED MATERIALS INC5 citations73
US9871240B2Jan 16, 2018
Electrospinning for integrated separator for lithium-ion batteries
APPLIED MATERIALS INC2 citations71
US11049761B2Jun 29, 2021
Shutter disk for physical vapor deposition chamber
APPLIED MATERIALS INC1 citations62
US7268076B2Sep 11, 2007
Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
APPLIED MATERIALS INC6 citations62
US10400328B2Sep 3, 2019
Physical vapor deposition system with a source of isotropic ion velocity distribution at the wafer surface
APPLIED MATERIALS INC0 citations52
US10468292B2Nov 5, 2019
Shutter disk for physical vapor deposition chamber
APPLIED MATERIALS INC0 citations51
US7541289B2Jun 2, 2009
Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue capture
APPLIED MATERIALS INC1 citations51
APPLE INC
6 patentsUS10741835B1Aug 11, 2020
Anode structure for a lithium metal battery
APPLE INC16 citations93
US10886567B1Jan 5, 2021
Liquid electrolyte for a lithium metal battery
APPLE INC2 citations67
US11309540B1Apr 19, 2022
Anode structure for a lithium metal battery
APPLE INC0 citations62
US11908998B2Feb 20, 2024
Liquid electrolyte for lithium metal battery
APPLE INC0 citations59
US10847834B1Nov 24, 2020
Corrosion resistant current collector for lithium metal anode
APPLE INC0 citations51
US11811051B2Nov 7, 2023
Electrochemical cell design with lithium metal anode
APPLE INC0 citations49
BROWN KARL M
5 patentsUS8512526B2Aug 20, 2013
Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron
BROWN KARL M7 citations83
US8062484B2Nov 22, 2011
Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target
BROWN KARL M7 citations83
US8927068B2Jan 6, 2015
Methods to fabricate variations in porosity of lithium ion battery electrode films
BROWN KARL M8 citations81
US8562798B2Oct 22, 2013
Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron
BROWN KARL M4 citations73
US8123969B2Feb 28, 2012
Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue capture
BROWN KARL M0 citations50
HOFFMAN DANIEL J
3 patentsUS8070925B2Dec 6, 2011
Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
HOFFMAN DANIEL J36 citations92
US9593411B2Mar 14, 2017
Physical vapor deposition chamber with capacitive tuning at wafer support
HOFFMAN DANIEL J8 citations83
US9856558B2Jan 2, 2018
Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface
HOFFMAN DANIEL J3 citations72