Inventor

BOLES TIMOTHY E

US25 patents

⚠️ This page may combine multiple inventors who share the name “BOLES TIMOTHY E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BOLES TIMOTHY E

MACOM TECH SOLUTIONS HOLDINGS INC

Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor

Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor

High-voltage GaN high electron mobility transistors with reduced leakage current

High-voltage GaN high electron mobility transistors

Microwave integrated circuits including gallium-nitride devices on silicon

Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon

III-nitride material semiconductor structures on conductive silicon substrates

Barrier for preventing eutectic break-through in through-substrate vias

High-voltage lateral GaN-on-silicon schottky diode with reduced junction leakage current

High-voltage lateral GaN-on-silicon Schottky diode

Parasitic capacitance reduction in GaN-on-silicon devices

Microwave integrated circuits including gallium-nitride devices on silicon

Reduced interfacial area III-nitride material semiconductor structures

Heterolithic integrated circuits including integrated devices formed on semiconductor materials of different elemental composition

Barrier for preventing eutectic break-through in through-substrate vias

Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor

Lateral Schottky diode

Parasitic capacitance reduction in GaN-on-silicon devices

Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device

Semiconductor device and method of forming monolithic surge protection resistor

Parasitic capacitance reduction in GaN devices

Transistor feedback capacitance reduction

WHITAKER CORP

Heterolithic voltage controlled oscillator

BOLES TIMOTHY E

Structure of a pHEMT transistor capable of nanosecond switching

M A COM TECHNOLOGY SOLUTIONS HOLDINGS INC

Performance enhancement of active device through reducing parasitic conduction