Inventor
KANG SE HUN
KR16 patents
⚠️ This page may combine multiple inventors who share the name “KANG SE HUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
12 patentsUS9685215B1Jun 20, 2017
Semiconductor memory device including a ferroelectric layer
SK HYNIX INC28 citations93
US11410813B2Aug 9, 2022
Semiconductor device with a booster layer and method for fabricating the same
SK HYNIX INC2 citations72
US10622378B2Apr 14, 2020
Multi-level ferroelectric memory device and method of manufacturing the same
SK HYNIX INC1 citations72
US8982604B2Mar 17, 2015
Resistive memory device and memory apparatus and data processing system having the same
SK HYNIX INC5 citations72
US12106904B2Oct 1, 2024
Semiconductor device with a booster layer and method for fabricating the same
SK HYNIX INC0 citations62
US11469310B2Oct 11, 2022
Semiconductor device
SK HYNIX INC1 citations60
US11515157B2Nov 29, 2022
Semiconductor device and method for fabricating the same
SK HYNIX INC0 citations52
US10748930B2Aug 18, 2020
Multi-level ferroelectric memory device and method of manufacturing the same
SK HYNIX INC0 citations51
US10734392B2Aug 4, 2020
Resistive memory device including ferroelectrics and method of manufacturing the same
SK HYNIX INC0 citations51
US9954000B2Apr 24, 2018
Multi-level ferroelectric memory device and method of manufacturing the same
SK HYNIX INC0 citations51
US9419221B2Aug 16, 2016
Method of fabricating semiconductor integrated circuit having phase-change layer
SK HYNIX INC1 citations51
US12034035B2Jul 9, 2024
Capacitor comprising anti-ferroelectric layers and high-k dielectric layers
SK HYNIX INC0 citations50