Inventor
KANG YOOL
KR27 patents
⚠️ This page may combine multiple inventors who share the name “KANG YOOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS6485895B1Nov 26, 2002
Methods for forming line patterns in semiconductor substrates
SAMSUNG ELECTRONICS CO LTD55 citations95
US6803176B2Oct 12, 2004
Methods for forming line patterns in semiconductor substrates
SAMSUNG ELECTRONICS CO LTD17 citations92
US7560768B2Jul 14, 2009
Nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US6753125B2Jun 22, 2004
Photosensitive polymer having fused aromatic ring and photoresist composition containing the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US6284438B1Sep 4, 2001
Method for manufacturing a photoresist pattern defining a small opening and method for manufacturing semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD16 citations83
US6300036B1Oct 9, 2001
Photosensitive polymers and chemically amplified photoresist compositions using the same
SAMSUNG ELECTRONICS CO LTD13 citations82
US6280903B1Aug 28, 2001
Chemically amplified resist composition
SAMSUNG ELECTRONICS CO LTD5 citations73
US6114084ASep 5, 2000
Chemically amplified resist composition
SAMSUNG ELECTRONICS CO LTD6 citations73
US9892915B2Feb 13, 2018
Hard mask composition, carbon nanotube layer structure, pattern forming method, and manufacturing method of semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations69
US7862988B2Jan 4, 2011
Method for forming patterns of semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations63
US6787287B2Sep 7, 2004
Photosensitive polymers and resist compositions comprising the photosensitive polymers
SAMSUNG ELECTRONICS CO LTD5 citations63
US8778598B2Jul 15, 2014
Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion
SAMSUNG ELECTRONICS CO LTD3 citations62
US7678650B2Mar 16, 2010
Nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US11189491B2Nov 30, 2021
Method of forming mask pattern and method of fabricating semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations53
US7842450B2Nov 30, 2010
Method of forming a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations49
US10236185B2Mar 19, 2019
Method of forming patterns for semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations48
US9337032B2May 10, 2016
Method of forming pattern of semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations47
US9613821B2Apr 4, 2017
Method of forming patterns and method of manufacturing integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations40
US8987118B2Mar 24, 2015
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations40
US10712662B2Jul 14, 2020
Methods of forming patterns using compositions for an underlayer of photoresist
SAMSUNG ELECTRONICS CO LTD0 citations36
KIM HYOUNG-HEE
2 patentsKANG YOOL
2 patentsUS8431331B2Apr 30, 2013
Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion
KANG YOOL4 citations59
US8536347B2Sep 17, 2013
Photoacid generator, chemically amplified resist composition including the same, and associated methods
KANG YOOL0 citations44