Inventor
JI YUN-HYUCK
KR33 patents
⚠️ This page may combine multiple inventors who share the name “JI YUN-HYUCK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
22 patentsUS9406678B2Aug 2, 2016
Method and gate structure for threshold voltage modulation in transistors
SK HYNIX INC11 citations84
US9299704B2Mar 29, 2016
Semiconductor device and method for fabricating the same
SK HYNIX INC9 citations84
US9281310B2Mar 8, 2016
Semiconductor device including gate structure for threshold voltage modulation in transistors and method for fabricating the same
SK HYNIX INC8 citations84
US10847519B2Nov 24, 2020
Semiconductor device having low-k spacer and method for fabricating the same
SK HYNIX INC6 citations81
US10672773B2Jun 2, 2020
Semiconductor device including ultra low-k spacer and method for fabricating the same
SK HYNIX INC10 citations81
US9548304B2Jan 17, 2017
Semiconductor device including gate structure for threshold voltage modulation in transistors and method for fabricating the same
SK HYNIX INC4 citations73
US10978458B2Apr 13, 2021
Semiconductor device including ultra low-k spacer and method for fabricating the same
SK HYNIX INC5 citations70
US8962463B2Feb 24, 2015
Semiconductor device with dual work function gate stacks and method for fabricating the same
SK HYNIX INC3 citations63
US9379023B2Jun 28, 2016
Semiconductor device with metal gate and high-k materials and method for fabricating the same
SK HYNIX INC2 citations62
US9171905B2Oct 27, 2015
Transistor including a stressed channel, a method for fabricating the same, and an electronic device including the same
SK HYNIX INC2 citations62
US9018710B2Apr 28, 2015
Semiconductor device with metal gate and high-k materials and method for fabricating the same
SK HYNIX INC2 citations62
US11877437B2Jan 16, 2024
Semiconductor device with low-k spacer
SK HYNIX INC0 citations61
US11545494B2Jan 3, 2023
Semiconductor device having low-k spacer and converting spacer and method for fabricating the same
SK HYNIX INC0 citations59
US12266707B2Apr 1, 2025
Semiconductor device with nano sheet transistor and method for fabricating the same
SK HYNIX INC0 citations52
US9899518B2Feb 20, 2018
Transistor, method for fabricating the same, and electronic device including the same
SK HYNIX INC0 citations52
US9659828B2May 23, 2017
Semiconductor device with metal gate and high-k dielectric layer, CMOS integrated circuit, and method for fabricating the same
SK HYNIX INC1 citations52
US9570608B2Feb 14, 2017
Transistor, method for fabricating the same, and electronic device including the same
SK HYNIX INC1 citations52
US9520495B2Dec 13, 2016
Transistor including a stressed channel, a method for fabricating the same, and an electronic device including the same
SK HYNIX INC0 citations52
US9230963B2Jan 5, 2016
Semiconductor device with dual work function gate stacks and method for fabricating the same
SK HYNIX INC1 citations52
US9034747B2May 19, 2015
Semiconductor device with metal gates and method for fabricating the same
SK HYNIX INC1 citations52
US9318595B2Apr 19, 2016
Method of forming gate dielectric layer and method of fabricating semiconductor device
SK HYNIX INC0 citations51
US9153586B2Oct 6, 2015
Semiconductor device having metal carbon nitride electrodes with different work functions
SK HYNIX INC0 citations51
JI YUN-HYUCK
5 patentsUS9431402B2Aug 30, 2016
Semiconductor device having buried bit line and method for fabricating the same
JI YUN-HYUCK3 citations71
US8653611B2Feb 18, 2014
Semiconductor device with metal gates and method for fabricating the same
JI YUN-HYUCK2 citations61
US9337108B2May 10, 2016
Semiconductor device with metal gate and high-k dielectric layer, CMOS integrated circuit, and method for fabricating the same
JI YUN-HYUCK1 citations51
US8455339B2Jun 4, 2013
Method for fabricating semiconductor device with side junction
JI YUN-HYUCK0 citations51
US8889515B2Nov 18, 2014
Method for fabricating semiconductor device by changing work function of gate metal layer
JI YUN-HYUCK0 citations50