Inventor
LEE SEUNG-MI
KR36 patents
⚠️ This page may combine multiple inventors who share the name “LEE SEUNG-MI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
13 patentsUS9406678B2Aug 2, 2016
Method and gate structure for threshold voltage modulation in transistors
SK HYNIX INC11 citations84
US9281310B2Mar 8, 2016
Semiconductor device including gate structure for threshold voltage modulation in transistors and method for fabricating the same
SK HYNIX INC8 citations84
US9548304B2Jan 17, 2017
Semiconductor device including gate structure for threshold voltage modulation in transistors and method for fabricating the same
SK HYNIX INC4 citations73
US8962463B2Feb 24, 2015
Semiconductor device with dual work function gate stacks and method for fabricating the same
SK HYNIX INC3 citations63
US11956945B2Apr 9, 2024
Semiconductor device and fabrication method of the same
SK HYNIX INC0 citations62
US11751381B2Sep 5, 2023
Semiconductor device and fabrication method of the same
SK HYNIX INC0 citations62
US9379023B2Jun 28, 2016
Semiconductor device with metal gate and high-k materials and method for fabricating the same
SK HYNIX INC2 citations62
US9018710B2Apr 28, 2015
Semiconductor device with metal gate and high-k materials and method for fabricating the same
SK HYNIX INC2 citations62
US11877437B2Jan 16, 2024
Semiconductor device with low-k spacer
SK HYNIX INC0 citations61
US9659828B2May 23, 2017
Semiconductor device with metal gate and high-k dielectric layer, CMOS integrated circuit, and method for fabricating the same
SK HYNIX INC1 citations52
US9230963B2Jan 5, 2016
Semiconductor device with dual work function gate stacks and method for fabricating the same
SK HYNIX INC1 citations52
US9034747B2May 19, 2015
Semiconductor device with metal gates and method for fabricating the same
SK HYNIX INC1 citations52
US9318595B2Apr 19, 2016
Method of forming gate dielectric layer and method of fabricating semiconductor device
SK HYNIX INC0 citations51
LG CHEMICAL LTD
8 patentsUS10253122B2Apr 9, 2019
Ethylene-1-hexene-1-butene terpolymer and a film including the same
LG CHEMICAL LTD1 citations62
US12286505B2Apr 29, 2025
Method for producing metallocene-supported catalyst and metallocene-supported catalyst
LG CHEMICAL LTD0 citations58
US10717793B2Jul 21, 2020
Olefin polymer and method for preparing same
LG CHEMICAL LTD0 citations51
US10562994B2Feb 18, 2020
Polyolefin for preparing fiber and fiber comprising the same
LG CHEMICAL LTD0 citations51
US9657119B2May 23, 2017
Preparation method of a supported metallocene catalyst
LG CHEMICAL LTD1 citations51
US10513474B2Dec 24, 2019
Catalyst composition and method of preparing polyolefin using the same
LG CHEMICAL LTD0 citations42
US10189920B2Jan 29, 2019
Hybrid supported catalyst system and method of preparing polyolefin using the same
LG CHEMICAL LTD0 citations42
US10280239B2May 7, 2019
Method for preparing polyolefin polymer for fiber production
LG CHEMICAL LTD0 citations40
SAMYANG CORP
4 patentsUS11779035B2Oct 10, 2023
Low-caloric beverage
SAMYANG CORP0 citations59
US11019831B2Jun 1, 2021
Low calorie coffee beverage composition
SAMYANG CORP0 citations59
US12302917B2May 20, 2025
Emulsified composition containing allulose
SAMYANG CORP0 citations58
US11653667B2May 23, 2023
Chocolate composition having improved processability, and preparation method therefor
SAMYANG CORP0 citations46
JI YUN-HYUCK
3 patentsUS9431402B2Aug 30, 2016
Semiconductor device having buried bit line and method for fabricating the same
JI YUN-HYUCK3 citations71
US8653611B2Feb 18, 2014
Semiconductor device with metal gates and method for fabricating the same
JI YUN-HYUCK2 citations61
US9337108B2May 10, 2016
Semiconductor device with metal gate and high-k dielectric layer, CMOS integrated circuit, and method for fabricating the same
JI YUN-HYUCK1 citations51