Inventor
PARK WOO-YOUNG
KR23 patents
⚠️ This page may combine multiple inventors who share the name “PARK WOO-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
7 patentsUS9159768B2Oct 13, 2015
Semiconductor device and electronic device including the same
SK HYNIX INC6 citations72
US8921214B2Dec 30, 2014
Variable resistance memory device and method for fabricating the same
SK HYNIX INC5 citations72
US11223012B2Jan 11, 2022
Variable resistance semiconductor device having oxidation-resistant electrode
SK HYNIX INC1 citations61
US11825755B2Nov 21, 2023
Non-volatile memory device and method of fabricating the same
SK HYNIX INC0 citations55
US11329220B2May 10, 2022
Non-volatile memory device and method of fabricating the same
SK HYNIX INC1 citations55
US9034747B2May 19, 2015
Semiconductor device with metal gates and method for fabricating the same
SK HYNIX INC1 citations52
US9153586B2Oct 6, 2015
Semiconductor device having metal carbon nitride electrodes with different work functions
SK HYNIX INC0 citations51
SAMSUNG ELECTRONICS CO LTD
4 patentsUS6701111B2Mar 2, 2004
Liquid image developing system
SAMSUNG ELECTRONICS CO LTD7 citations73
US10929009B2Feb 23, 2021
Electronic device for outputting graphic indication
SAMSUNG ELECTRONICS CO LTD2 citations68
US6885843B2Apr 26, 2005
Wet electro-photographic printer having subsidiary intermediate transfer unit for improving transfer efficiency
SAMSUNG ELECTRONICS CO LTD3 citations62
US6330421B1Dec 11, 2001
Apparatus for dissolving residual toner from a transfer roller and a photoreceptor belt of a liquid electrophotographic printer upon printing of a sheet/user actuation
SAMSUNG ELECTRONICS CO LTD3 citations60
PARK WOO YOUNG
3 patentsJI YUN-HYUCK
3 patentsUS9431402B2Aug 30, 2016
Semiconductor device having buried bit line and method for fabricating the same
JI YUN-HYUCK3 citations71
US8653611B2Feb 18, 2014
Semiconductor device with metal gates and method for fabricating the same
JI YUN-HYUCK2 citations61
US8889515B2Nov 18, 2014
Method for fabricating semiconductor device by changing work function of gate metal layer
JI YUN-HYUCK0 citations50