Inventor · disambiguated record
Kazumi Kurimoto
Also filed as: KURIMOTO KAZUMI
15 granted patents·1 pending application·507 citations·filing 1989–2012
95Inventor score
Top patents by PatentIndex Score
16 records- 0195US7301208B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Nov 27, 2007·118 cites·16 claims
- 0282US6870265B2Semiconductor device and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Mar 22, 2005·34 cites·12 claims
- 0377US5512771AMOS type semiconductor device having a low concentration impurity diffusion regionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Apr 30, 1996·65 cites·5 claims
- 0476US5808347AMIS transistor with gate sidewall insulating layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Sep 15, 1998·34 cites·12 claims
- 0574US5270226AManufacturing method for LDDFETS using oblique ion implantion techniqueMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Dec 14, 1993·42 cites·13 claims
- 0672US7271449B2Semiconductor device having triple-well structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Sep 18, 2007·6 cites·14 claims
- 0772US5306655AStructure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regionsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Apr 26, 1994·47 cites·2 claims
- 0869US5221632AMethod of proudcing a MIS transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Jun 22, 1993·26 cites·3 claims
- 0967US5451799AMOS transistor for protection against electrostatic dischargeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Sep 19, 1995·27 cites·9 claims
- 1065US5610430ASemiconductor device having reduced gate overlapping capacitanceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Mar 11, 1997·31 cites·7 claims
- 1157US2013075851A1Solid-state imaging devicePANASONIC CORP·Filed 2012·Application pending·0 cites
- 1255US5675168AUnsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Oct 7, 1997·16 cites·5 claims
- 1355US5405787AStructure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regionsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Apr 11, 1995·23 cites·5 claims
- 1455US5386133ALDD FET with polysilicon sidewallsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Jan 31, 1995·14 cites·2 claims
- 1552US5514893ASemiconductor device for protecting an internal circuit from electrostatic damageMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted May 7, 1996·14 cites·35 claims
- 1648US5518944AMOS transistor and its fabricating methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted May 21, 1996·10 cites·3 claims
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