Inventor

BAI JINGYI

US21 patents

⚠️ This page may combine multiple inventors who share the name “BAI JINGYI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BAI JINGYI

MICRON TECHNOLOGY INC

Multiple deposition for integration of spacers in pitch multiplication process

Pitch reduced patterns relative to photolithography features

Prevention of photoresist scumming

Methods for filling high aspect ratio trenches in semiconductor layers

Prevention of photoresist scumming

Methods for filling high aspect ratio trenches in semiconductor layers

Method to reduce charge buildup during high aspect ratio contact etch

Prevention of photoresist scumming

Method to reduce charge buildup during high aspect ratio contact etch

TRAN LUAN

Integrated circuit having pitch reduced patterns relative to photoithography features

Pitch reduced patterns relative to photolithography features

Pitch reduced patterns relative to photolithography features

ROUND ROCK RES LLC

Pitch reduced patterns relative to photolithography features

Multiple deposition for integration of spacers in pitch multiplication process

Pitch reduced patterns relative to photolithography features

CISTA SYS CORP

Back side illuminated CMOS image sensor arrays

Back side illuminated CMOS image sensor arrays

VELICHKO SERGEY

Global shutter pixel with improved efficiency

YIN ZHIPING

Prevention of photoresist scumming

BAI JINGYI

Multiple deposition for integration of spacers in pitch multiplication process

SANDHU GURTEJ S

Method to reduce charge buildup during high aspect ratio contact etch