P

Inventor

HEO JIN-SEONG

KR39 patents
⚠️ This page may combine multiple inventors who share the name “HEO JIN-SEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

20 patents
US9349802B2May 24, 2016

Memory devices including two-dimensional material, methods of manufacturing the same, and methods of operating the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US9306005B2Apr 5, 2016

Electronic device including graphene

SAMSUNG ELECTRONICS CO LTD10 citations84
US9105556B2Aug 11, 2015

Tunneling field-effect transistor including graphene channel

SAMSUNG ELECTRONICS CO LTD11 citations84
US9053932B2Jun 9, 2015

Methods of preparing graphene and device including graphene

SAMSUNG ELECTRONICS CO LTD10 citations84
US9040957B2May 26, 2015

Field effect transistor using graphene

SAMSUNG ELECTRONICS CO LTD8 citations84
US8884345B2Nov 11, 2014

Graphene electronic device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations84
US9455256B2Sep 27, 2016

Inverter including two-dimensional material, method of manufacturing the same and logic device including inverter

SAMSUNG ELECTRONICS CO LTD2 citations63
US9166062B2Oct 20, 2015

Field effect transistor using graphene

SAMSUNG ELECTRONICS CO LTD2 citations63
US9142635B2Sep 22, 2015

Graphene electronic device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US9048310B2Jun 2, 2015

Graphene switching device having tunable barrier

SAMSUNG ELECTRONICS CO LTD2 citations63
US8835899B2Sep 16, 2014

Graphene electronic device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US9306021B2Apr 5, 2016

Graphene devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US8045371B2Oct 25, 2011

Magnetic storage device having a buffer track and storage tracks, and method of operating the same

SAMSUNG ELECTRONICS CO LTD3 citations61
US9525076B2Dec 20, 2016

Memory device using graphene as charge-trap layer and method of operating the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US9515144B2Dec 6, 2016

Fin-type graphene device

SAMSUNG ELECTRONICS CO LTD0 citations52
US9373685B2Jun 21, 2016

Graphene device and electronic apparatus

SAMSUNG ELECTRONICS CO LTD0 citations52
US9281404B2Mar 8, 2016

Three-dimensional graphene switching device

SAMSUNG ELECTRONICS CO LTD0 citations52
US9257528B2Feb 9, 2016

Graphene electronic device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US8999201B2Apr 7, 2015

Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9299789B2Mar 29, 2016

Memory devices including graphene switching devices

SAMSUNG ELECTRONICS CO LTD0 citations42

HEO JIN-SEONG

5 patents

CHUNG HYUN-JONG

4 patents

YANG HEE-JUN

2 patents

WOO YUN-SUNG

2 patents

LEE SUNG-CHUL

2 patents

LEE SUNG-HOON

1 patent

HEO JIN SEONG

1 patent

SEO DAVID

1 patent

BAE JI-YOUNG

1 patent