Inventor
HEO JIN-SEONG
KR39 patents
⚠️ This page may combine multiple inventors who share the name “HEO JIN-SEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS9349802B2May 24, 2016
Memory devices including two-dimensional material, methods of manufacturing the same, and methods of operating the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US9306005B2Apr 5, 2016
Electronic device including graphene
SAMSUNG ELECTRONICS CO LTD10 citations84
US9105556B2Aug 11, 2015
Tunneling field-effect transistor including graphene channel
SAMSUNG ELECTRONICS CO LTD11 citations84
US9053932B2Jun 9, 2015
Methods of preparing graphene and device including graphene
SAMSUNG ELECTRONICS CO LTD10 citations84
US9040957B2May 26, 2015
Field effect transistor using graphene
SAMSUNG ELECTRONICS CO LTD8 citations84
US8884345B2Nov 11, 2014
Graphene electronic device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations84
US9455256B2Sep 27, 2016
Inverter including two-dimensional material, method of manufacturing the same and logic device including inverter
SAMSUNG ELECTRONICS CO LTD2 citations63
US9166062B2Oct 20, 2015
Field effect transistor using graphene
SAMSUNG ELECTRONICS CO LTD2 citations63
US9142635B2Sep 22, 2015
Graphene electronic device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US9048310B2Jun 2, 2015
Graphene switching device having tunable barrier
SAMSUNG ELECTRONICS CO LTD2 citations63
US8835899B2Sep 16, 2014
Graphene electronic device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US9306021B2Apr 5, 2016
Graphene devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US8045371B2Oct 25, 2011
Magnetic storage device having a buffer track and storage tracks, and method of operating the same
SAMSUNG ELECTRONICS CO LTD3 citations61
US9525076B2Dec 20, 2016
Memory device using graphene as charge-trap layer and method of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US9515144B2Dec 6, 2016
Fin-type graphene device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9373685B2Jun 21, 2016
Graphene device and electronic apparatus
SAMSUNG ELECTRONICS CO LTD0 citations52
US9281404B2Mar 8, 2016
Three-dimensional graphene switching device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9257528B2Feb 9, 2016
Graphene electronic device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US8999201B2Apr 7, 2015
Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9299789B2Mar 29, 2016
Memory devices including graphene switching devices
SAMSUNG ELECTRONICS CO LTD0 citations42
HEO JIN-SEONG
5 patentsUS8101980B2Jan 24, 2012
Graphene device and method of manufacturing the same
HEO JIN-SEONG16 citations92
US9064777B2Jun 23, 2015
Graphene switching device having tunable barrier
HEO JIN-SEONG7 citations83
US8575665B2Nov 5, 2013
Graphene electronic device and method of fabricating the same
HEO JIN-SEONG9 citations83
US9136336B2Sep 15, 2015
Inverter logic devices including graphene field effect transistor having tunable barrier
HEO JIN-SEONG2 citations62
US9093509B2Jul 28, 2015
Graphene electronic devices
HEO JIN-SEONG1 citations51
CHUNG HYUN-JONG
4 patentsUS8785912B2Jul 22, 2014
Graphene electronic device including a plurality of graphene channel layers
CHUNG HYUN-JONG5 citations73
US8728880B2May 20, 2014
Graphene electronic device and method of fabricating the same
CHUNG HYUN-JONG4 citations72
US8405133B2Mar 26, 2013
Semiconductor device including graphene and method of manufacturing the semiconductor device
CHUNG HYUN-JONG2 citations62
US8421131B2Apr 16, 2013
Graphene electronic device and method of fabricating the same
CHUNG HYUN-JONG4 citations61