Inventor · disambiguated record
Wensheng Qian
Also filed as: QIAN WENSHENG
35 granted patents·11 pending applications·55 citations·filing 2010–2023
95Inventor score
Files withSHANGHAI HUAHONG NEC ELECT CO15CHIU TZUYIN8QIAN WENSHENG6SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP6LIU DONGHUA5
Top patents by PatentIndex Score
46 records- 0183US8222114B2Manufacturing approach for collector and a buried layer of bipolar transistorCHIU TZUYIN·Filed 2010·Granted Jul 17, 2012·10 cites·6 claims
- 0282US9997626B2NLDMOS device and method for manufacturing the sameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2015·Granted Jun 12, 2018·4 cites·17 claims
- 0381US8421185B2Parasitic vertical PNP bipolar transistor in BiCMOS processCHIU TZUYIN·Filed 2010·Granted Apr 16, 2013·7 cites·2 claims
- 0475US8420475B2Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS processCHIU TZUYIN·Filed 2010·Granted Apr 16, 2013·5 cites·4 claims
- 0575US8378457B2Silicon-germanium heterojunction bipolar transistorSHANGHAI HUAHONG NEC ELECT CO·Filed 2011·Granted Feb 19, 2013·4 cites·12 claims
- 0673US8455975B2Parasitic PNP bipolar transistor in a silicon-germanium BiCMOS processLIU DONGHUA·Filed 2011·Granted Jun 4, 2013·4 cites·7 claims
- 0769US8716111B2Method for manufacturing trench type superjunction device and trench type superjunction deviceWANG FEI·Filed 2011·Granted May 6, 2014·2 cites·18 claims
- 0866US8803279B2Structure for picking up a collector and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Aug 12, 2014·2 cites·15 claims
- 0965US8759880B2Ultra-high voltage SIGE HBT device and manufacturing method of the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Jun 24, 2014·2 cites·13 claims
- 1065US8748238B2Ultra high voltage SiGe HBT and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Jun 10, 2014·2 cites·11 claims
- 1164US8637959B2Vertical parasitic PNP device in a BiCMOS process and manufacturing method of the sameQIAN WENSHENG·Filed 2011·Granted Jan 28, 2014·2 cites·8 claims
- 1263US8674480B2High voltage bipolar transistor with pseudo buried layersCHIU TZUYIN·Filed 2010·Granted Mar 18, 2014·2 cites·9 claims
- 1363US8395188B2Silicon-germanium heterojunction bipolar transistorLIU DONGHUA·Filed 2011·Granted Mar 12, 2013·2 cites·10 claims
- 1461US9130003B2Structure for picking up a collector and method of manufacturing the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Sep 8, 2015·1 cites·10 claims
- 1561US9059277B2RF LDMOS device and fabrication method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Jun 16, 2015·2 cites·13 claims
- 1660US8742538B2SiGe HBT and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Jun 3, 2014·1 cites·5 claims
- 1758US12453207B2Image sensor and method for forming the sameHUA HONG SEMICONDUCTOR WUXI LTD·Filed 2023·Granted Oct 21, 2025·0 cites·18 claims
- 1858US8592870B2Pseudo buried layer and manufacturing method of the same, deep hole contact and bipolar transistorLIU DONGHUA·Filed 2011·Granted Nov 26, 2013·1 cites·11 claims
- 1957US8598678B2Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS processQIAN WENSHENG·Filed 2010·Granted Dec 3, 2013·1 cites·12 claims
- 2052US8476728B2Parasitic PIN device in a BiCMOS process and manufacturing method of the sameQIAN WENSHENG·Filed 2011·Granted Jul 2, 2013·1 cites·10 claims
- 2151US12500116B2Method for making deep trench isolation of CIS device, and semiconductor device structureHUA HONG SEMICONDUCTOR WUXI LTD·Filed 2022·Granted Dec 16, 2025·0 cites·6 claims
- 2251US11456371B2Method for making LDMOS device and LDMOS deviceSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2020·Granted Sep 27, 2022·0 cites·15 claims
- 2350US2024030279A1Semiconductor Structure and Method for Forming the SameHUA HONG SEMICONDUCTOR WUXI LTD·Filed 2023·Application pending·0 cites
- 2447US9117900B2RF LDMOS device and method of forming the sameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2014·Granted Aug 25, 2015·0 cites·13 claims
- 2547US8816400B2SiGe HBT having deep pseudo buried layer and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Aug 26, 2014·0 cites·16 claims
- 2646US8779473B2SiGe HBT device and manufacturing method of the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Jul 15, 2014·0 cites·9 claims
- 2745US11264497B2LDMOS device and method for manufacturing sameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2019·Granted Mar 1, 2022·0 cites·6 claims
- 2843US8785977B2High speed SiGe HBT and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Jul 22, 2014·0 cites·11 claims
- 2943US2014159153A1Rf ldmos device and method of forming the sameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2013·Application pending·0 cites
- 3042US9997605B2LDMOS device and its manufacturing methodQIAN WENSHENG·Filed 2014·Granted Jun 12, 2018·0 cites·10 claims
- 3142US9029948B2LDMOS device with step-like drift region and fabrication method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted May 12, 2015·0 cites·16 claims
- 3241US9012279B2SiGe HBT and method of manufacturing the sameLIU DONGHUA·Filed 2012·Granted Apr 21, 2015·0 cites·10 claims
- 3341US8866189B2Silicon-germanium heterojunction bipolar transistor and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Oct 21, 2014·0 cites·16 claims
- 3441US2013113104A1Structure for picking up a buried layer and method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Application pending·0 cites
- 3540US9484455B2Isolation NLDMOS device and a manufacturing method thereforSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2015·Granted Nov 1, 2016·0 cites·12 claims
- 3640US8829650B2Zener diode in a SiGe BiCMOS process and method of fabricating the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Sep 9, 2014·0 cites·9 claims
- 3740US2013196491A1Method of preventing dopant from diffusing into atmosphere in a bicmos processSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Application pending·0 cites
- 3837US2013075730A1Vertical pnp device in a silicon-germanium bicmos process and manufacturing method thereofQIAN WENSHENG·Filed 2012·Application pending·0 cites
- 3937US2013113078A1Polysilicon-insulator-silicon capacitor in a sige hbt process and manufacturing method thereofLIU DONGHUA·Filed 2012·Application pending·0 cites
- 4036US9478640B2LDMOS device with step-like drift region and fabrication method thereofSHANGHAI HUA HONG NEC ELECTRONICS CO LTD·Filed 2013·Granted Oct 25, 2016·0 cites·5 claims
- 4136US8420495B2Manufacturing approach for collector and a buried layer of bipolar transistorCHIU TZUYIN·Filed 2010·Granted Apr 16, 2013·0 cites·4 claims
- 4235US2011147892A1Bipolar Transistor with Pseudo Buried LayersCHIU TZUYIN·Filed 2010·Application pending·0 cites
- 4335US2012032233A1Silicon-germanium heterojunction bipolar transistor and manufacturing method of the sameQIAN WENSHENG·Filed 2011·Application pending·0 cites
- 4434US2014042522A1Rf ldmos device and fabrication method thereofSHANGHAI HUA HONG NEC ELECTONICS CO LTD·Filed 2013·Application pending·0 cites
- 4534US2011156163A1Structure of electrode pick up in LOCOSCHIU TZUYIN·Filed 2010·Application pending·0 cites
- 4634US2011156151A1Electrode Pick Up Structure In Shallow Trench Isolation ProcessCHIU TZUYIN·Filed 2010·Application pending·0 cites
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