Inventor

BOLOTNIKOV ALEXANDER VIKTOROVICH

US45 patents

⚠️ This page may combine multiple inventors who share the name “BOLOTNIKOV ALEXANDER VIKTOROVICH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BOLOTNIKOV ALEXANDER VIKTOROVICH

GEN ELECTRIC

Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensions

Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensions

Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) devices having an optimization layer

Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region extensions

Active area designs for silicon carbide super-junction power devices

Active area designs for charge-balanced diodes

Silicon carbide device and method of making thereof

Systems and methods for unipolar charge balanced semiconductor power devices

Integrated gate resistors for semiconductor power conversion devices

Cellular layout for semiconductor devices

Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells

Semiconductor devices having channel regions with non-uniform edge

Systems and method for charge balanced semiconductor power devices with fast switching capability

System and method for edge termination of super-junction (SJ) devices

Super-junction semiconductor power devices with fast switching capability

System and method for edge termination of super-junction (SJ) devices

Semiconductor device with junction termination extension

Transient voltage suppression devices with symmetric breakdown characteristics

Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices

Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture

Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices

Systems and methods for integrated diode field-effect transistor semiconductor devices

Systems and methods for termination in silicon carbide charge balance power devices

Edge termination designs for silicon carbide super-junction power devices

Cellular layout for semiconductor devices

Systems and methods for junction termination of wide band gap super-junction power devices

Systems and methods for junction termination in semiconductor devices

Systems and methods for junction termination of wide band gap super-junction power devices

Insulating gate field effect transistor device and method for providing the same

Semiconductor device and method of making thereof

Techniques for fabricating planar charge balanced (CB) metal-oxide-semiconductor field-effect transistor (MOSFET) devices

Metal-oxide-semiconductor (MOS) devices with increased channel periphery

Transistor and switching system comprising silicon carbide and oxides of varying thicknesses, and method for providing the same

High energy ion implantation for junction isolation in silicon carbide devices

Gate networks having positive temperature coefficients of resistance (PTC) for semiconductor power conversion devices

Structure and method for transient voltage suppression devices with a two-region base

Semiconductor device and method of making thereof

Method and system for transient voltage suppression devices with active control

Designing and fabricating semiconductor devices with specific terrestrial cosmic ray (TCR) ratings

Semiconductor device having gate trench in JFET region

Super-junction semiconductor device fabrication

Semiconductor devices and methods of manufacture

SEMICONDUCTOR COMPONENTS IND LLC

Cascode semiconductor device

Diodes with schottky contact including localized surface regions

SOLOVIEV STANISLAV IVANOVICH

Semiconductor device and method for making the same