Inventor
MIYANAGA ISAO
JP24 patents
⚠️ This page may combine multiple inventors who share the name “MIYANAGA ISAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
22 patentsUS6005401ADec 21, 1999
Semiconductor wafer package, method and apparatus for connecting testing IC terminals of semiconductor wafer and probe terminals, testing method of a semiconductor integrated circuit, probe card and its manufacturing method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD140 citations98
US5945834AAug 31, 1999
Semiconductor wafer package, method and apparatus for connecting testing IC terminals of semiconductor wafer and probe terminals, testing method of a semiconductor integrated circuit, probe card and its manufacturing method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD160 citations98
US5843844ADec 1, 1998
Probe sheet and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD61 citations96
US7126174B2Oct 24, 2006
Semiconductor device and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations92
US6800512B1Oct 5, 2004
Method of forming insulating film and method of fabricating semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations92
US6323663B1Nov 27, 2001
Semiconductor wafer package, method and apparatus for connecting testing IC terminals of semiconductor wafer and probe terminals, testing method of a semiconductor integrated circuit, probe card and its manufacturing method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD37 citations92
US6281562B1Aug 28, 2001
Semiconductor device which reduces the minimum distance requirements between active areas
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations92
US5825193AOct 20, 1998
Semiconductor integrated circuit device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD32 citations92
US5693557ADec 2, 1997
Method of fabricating a semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD29 citations92
US5474949ADec 12, 1995
Method of fabricating capacitor or contact for semiconductor device by forming uneven oxide film and reacting silicon with metal containing gas
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations92
US5451799ASep 19, 1995
MOS transistor for protection against electrostatic discharge
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations92
US5418187AMay 23, 1995
Method for extending electrically conductive layer into electrically insulating layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations92
US7033874B2Apr 25, 2006
Method of forming insulating film and method of fabricating semiconductor device including plasma bias for forming a second insulating film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations74
US5892368AApr 6, 1999
Semiconductor integrated circuit device having failure detection circuitry
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US5675168AOct 7, 1997
Unsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations74
US5514893AMay 7, 1996
Semiconductor device for protecting an internal circuit from electrostatic damage
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations74
US5661068AAug 26, 1997
Method of fabricating a semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73
US6974987B2Dec 13, 2005
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US6967409B2Nov 22, 2005
Semiconductor device and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6890824B2May 10, 2005
Semiconductor device and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6709950B2Mar 23, 2004
Semiconductor device and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US7057236B2Jun 6, 2006
Semiconductor device and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations52