Inventor
KAN JIMMY
US12 patents
Patents
12 patentsUS9634237B2Apr 25, 2017
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
QUALCOMM INC46 citations97
US9589619B2Mar 7, 2017
Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy
QUALCOMM INC22 citations94
US9646670B2May 9, 2017
Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy
QUALCOMM INC10 citations84
US9620706B2Apr 11, 2017
Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device
QUALCOMM INC10 citations84
US9595917B2Mar 14, 2017
Antiferromagnetically coupled spin-torque oscillator with hard perpendicular polarizer
QUALCOMM INC13 citations84
US9728718B2Aug 8, 2017
Magnetic tunnel junction (MTJ) device array
QUALCOMM INC3 citations73
US9570509B2Feb 14, 2017
Magnetic tunnel junction (MTJ) device array
QUALCOMM INC2 citations73
US9444035B2Sep 13, 2016
Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication
QUALCOMM INC2 citations62
US10103319B2Oct 16, 2018
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
QUALCOMM INC1 citations52
US9595666B2Mar 14, 2017
Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials
QUALCOMM INC0 citations52
US9385309B2Jul 5, 2016
Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials
QUALCOMM INC1 citations52
US9813049B2Nov 7, 2017
Comparator including a magnetic tunnel junction (MTJ) device and a transistor
QUALCOMM INC0 citations41