Inventor
MILLER ANNE E
US22 patents
⚠️ This page may combine multiple inventors who share the name “MILLER ANNE E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
21 patentsUS7157378B2Jan 2, 2007
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
INTEL CORP107 citations98
US6908863B2Jun 21, 2005
Sacrificial dielectric planarization layer
INTEL CORP24 citations92
US6719614B2Apr 13, 2004
Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing
INTEL CORP13 citations92
US6596640B1Jul 22, 2003
Method of forming a raised contact for a substrate
INTEL CORP84 citations92
US6464568B2Oct 15, 2002
Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing
INTEL CORP27 citations92
US6443814B1Sep 3, 2002
Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing
INTEL CORP35 citations92
US6740591B1May 25, 2004
Slurry and method for chemical mechanical polishing of copper
INTEL CORP17 citations83
US7585760B2Sep 8, 2009
Method for forming planarizing copper in a low-k dielectric
INTEL CORP14 citations81
US7223685B2May 29, 2007
Damascene fabrication with electrochemical layer removal
INTEL CORP10 citations81
US7201784B2Apr 10, 2007
Surfactant slurry additives to improve erosion, dishing, and defects during chemical mechanical polishing of copper damascene with low k dielectrics
INTEL CORP18 citations79
US7109557B2Sep 19, 2006
Sacrificial dielectric planarization layer
INTEL CORP6 citations74
US6852631B2Feb 8, 2005
Copper polish slurry for reduced interlayer dielectric erosion and method of using same
INTEL CORP7 citations73
US6787061B1Sep 7, 2004
Copper polish slurry for reduced interlayer dielectric erosion and method of using same
INTEL CORP4 citations73
US6752844B2Jun 22, 2004
Ceric-ion slurry for use in chemical-mechanical polishing
INTEL CORP11 citations73
US6719920B2Apr 13, 2004
Slurry for polishing a barrier layer
INTEL CORP12 citations73
US6825117B2Nov 30, 2004
High PH slurry for chemical mechanical polishing of copper
INTEL CORP6 citations72
US6838383B2Jan 4, 2005
Copper polish slurry for reduced interlayer dielectric erosion and method of using same
INTEL CORP2 citations62
US7731864B2Jun 8, 2010
Slurry for chemical mechanical polishing of aluminum
INTEL CORP3 citations54
US7666465B2Feb 23, 2010
Introducing nanotubes in trenches and structures formed thereby
INTEL CORP1 citations52
US6909193B2Jun 21, 2005
High pH slurry for chemical mechanical polishing of copper
INTEL CORP0 citations51
US7560380B2Jul 14, 2009
Chemical dissolution of barrier and adhesion layers
INTEL CORP0 citations49