Inventor

CHENG HUAI-YU

US24 patents

⚠️ This page may combine multiple inventors who share the name “CHENG HUAI-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHENG HUAI-YU

MACRONIX INT CO LTD

Te-free AsSeGe chalcogenides for selector devices and memory devices using same

GaSbGe phase change memory materials

Phase change memory material and system for embedded memory applications

Method for making memory cell by melting phase change material in confined space

Composite target sputtering for forming doped phase change materials

Phase change memory having one or more non-constant doping profiles

Superlattice-like switching devices

Dielectric doped, Sb-rich GST phase change memory

C—As—Se—Ge ovonic materials for selector devices and memory devices using same

Semiconductor device and memory cell

High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application

Memory material, and memory device applying the same

Semiconductor device and memory cell

Multi-layer ovonic threshold switch (OTS) for switching devices and memory devices using the same

IBM

Phase change memory cell with improved phase change material

Phase change storage device with multiple serially connected storage regions

Mitigating moisture driven degradation of silicon doped chalcogenides

Suppressing oxidation of silicon germanium selenium arsenide material

Phase change memory cell with improved phase change material

CHENG HUAI-YU

Ge-Rich GST-212 phase change memory materials

Stressed phase change materials

Composite target sputtering for forming doped phase change materials

Methods for reducing recrystallization time for a phase change material

IND TECH RES INST

Production method of multi-layer information record carriers