Inventor
WANG CHIH-HAO
TW1,012 patents
⚠️ This page may combine multiple inventors who share the name “WANG CHIH-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
38 patentsUS10157799B2Dec 18, 2018
Multi-gate device and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD135 citations99
US10109721B2Oct 23, 2018
Horizontal gate-all-around device having wrapped-around source and drain
TAIWAN SEMICONDUCTOR MFG CO LTD140 citations99
US9887269B2Feb 6, 2018
Multi-gate device and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD151 citations99
US9881993B2Jan 30, 2018
Method of forming semiconductor structure with horizontal gate all around structure
TAIWAN SEMICONDUCTOR MFG CO LTD143 citations99
US9818872B2Nov 14, 2017
Multi-gate device and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD166 citations99
US9608116B2Mar 28, 2017
FINFETs with wrap-around silicide and method forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1,317 citations99
US9520482B1Dec 13, 2016
Method of cutting metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD3,161 citations98
US11289606B2Mar 29, 2022
Capacitance reduction for back-side power rail device
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations94
US11222892B2Jan 11, 2022
Backside power rail and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations94
US11195930B1Dec 7, 2021
Semiconductor devices with backside power rail and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US11031292B2Jun 8, 2021
Multi-gate device and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations94
US10833003B1Nov 10, 2020
Integrated circuits with backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US10211307B2Feb 19, 2019
Methods of manufacturing inner spacers in a gate-all-around (GAA) FET through multi-layer spacer replacement
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations94
US10181426B1Jan 15, 2019
Etch profile control of polysilicon structures of semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations94
US10157790B1Dec 18, 2018
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD29 citations94
US10026737B1Jul 17, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US9991262B1Jun 5, 2018
Semiconductor device on hybrid substrate and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD24 citations94
US9935199B2Apr 3, 2018
FinFET with source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD27 citations94
US9911824B2Mar 6, 2018
Semiconductor structure with multi spacer
TAIWAN SEMICONDUCTOR MFG CO LTD20 citations94
US9614086B1Apr 4, 2017
Conformal source and drain contacts for multi-gate field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD27 citations94
US10483378B2Nov 19, 2019
Epitaxial features confined by dielectric fins and spacers
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations93
US9941374B2Apr 10, 2018
Contacts for highly scaled transistors
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations93
US9754840B2Sep 5, 2017
Horizontal gate-all-around device having wrapped-around source and drain
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations93
US9634127B2Apr 25, 2017
FinFET device and method for fabricating same
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations93
US9559181B2Jan 31, 2017
Structure and method for FinFET device with buried sige oxide
TAIWAN SEMICONDUCTOR MFG CO LTD20 citations93
US9508858B2Nov 29, 2016
Contacts for highly scaled transistors
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations93
US9461110B1Oct 4, 2016
FETs and methods of forming FETs
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations93
US9202917B2Dec 1, 2015
Buried SiGe oxide FinFET scheme for device enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD25 citations93
US11621352B2Apr 4, 2023
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations86
US11615962B2Mar 28, 2023
Semiconductor structures and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11616062B2Mar 28, 2023
Gate isolation for multigate device
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11581224B2Feb 14, 2023
Method for forming long channel back-side power rail device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11532713B2Dec 20, 2022
Source/drain contacts and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11502168B2Nov 15, 2022
Tuning threshold voltage in nanosheet transitor devices
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11462612B2Oct 4, 2022
Semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11450751B2Sep 20, 2022
Integrated circuit structure with backside via rail
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11443987B2Sep 13, 2022
Semiconductor devices with backside air gap dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11404548B2Aug 2, 2022
Capacitance reduction for backside power rail device
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
TAIWAN SEMICONDUCTOR MFG
11 patentsUS9006786B2Apr 14, 2015
Fin structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG48 citations98
US8901607B2Dec 2, 2014
Semiconductor device and fabricating the same
TAIWAN SEMICONDUCTOR MFG60 citations98
US9318606B2Apr 19, 2016
FinFET device and method of fabricating same
TAIWAN SEMICONDUCTOR MFG23 citations93
US9006842B2Apr 14, 2015
Tuning strain in semiconductor devices
TAIWAN SEMICONDUCTOR MFG26 citations93
US7465972B2Dec 16, 2008
High performance CMOS device design
TAIWAN SEMICONDUCTOR MFG21 citations92
US7381619B2Jun 3, 2008
Dual work-function metal gates
TAIWAN SEMICONDUCTOR MFG55 citations92
US7355235B2Apr 8, 2008
Semiconductor device and method for high-k gate dielectrics
TAIWAN SEMICONDUCTOR MFG22 citations92
US7332407B2Feb 19, 2008
Method and apparatus for a semiconductor device with a high-k gate dielectric
TAIWAN SEMICONDUCTOR MFG22 citations92
US7229893B2Jun 12, 2007
Method and apparatus for a semiconductor device with a high-k gate dielectric
TAIWAN SEMICONDUCTOR MFG32 citations92
US7045847B2May 16, 2006
Semiconductor device with high-k gate dielectric
TAIWAN SEMICONDUCTOR MFG19 citations92
US6777299B1Aug 17, 2004
Method for removal of a spacer
TAIWAN SEMICONDUCTOR MFG17 citations92
WANG CHIH-HAO
1 patentShowing the top 50 of 1,012 patents by PatentIndex Score.