P

Inventor

WANG CHIH-HAO

TW1,012 patents
⚠️ This page may combine multiple inventors who share the name “WANG CHIH-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

38 patents
US10157799B2Dec 18, 2018

Multi-gate device and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD135 citations99
US10109721B2Oct 23, 2018

Horizontal gate-all-around device having wrapped-around source and drain

TAIWAN SEMICONDUCTOR MFG CO LTD140 citations99
US9887269B2Feb 6, 2018

Multi-gate device and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD151 citations99
US9881993B2Jan 30, 2018

Method of forming semiconductor structure with horizontal gate all around structure

TAIWAN SEMICONDUCTOR MFG CO LTD143 citations99
US9818872B2Nov 14, 2017

Multi-gate device and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD166 citations99
US9608116B2Mar 28, 2017

FINFETs with wrap-around silicide and method forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1,317 citations99
US9520482B1Dec 13, 2016

Method of cutting metal gate

TAIWAN SEMICONDUCTOR MFG CO LTD3,161 citations98
US11289606B2Mar 29, 2022

Capacitance reduction for back-side power rail device

TAIWAN SEMICONDUCTOR MFG CO LTD15 citations94
US11222892B2Jan 11, 2022

Backside power rail and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD16 citations94
US11195930B1Dec 7, 2021

Semiconductor devices with backside power rail and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US11031292B2Jun 8, 2021

Multi-gate device and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD16 citations94
US10833003B1Nov 10, 2020

Integrated circuits with backside power rails

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US10211307B2Feb 19, 2019

Methods of manufacturing inner spacers in a gate-all-around (GAA) FET through multi-layer spacer replacement

TAIWAN SEMICONDUCTOR MFG CO LTD22 citations94
US10181426B1Jan 15, 2019

Etch profile control of polysilicon structures of semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD15 citations94
US10157790B1Dec 18, 2018

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD29 citations94
US10026737B1Jul 17, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US9991262B1Jun 5, 2018

Semiconductor device on hybrid substrate and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD24 citations94
US9935199B2Apr 3, 2018

FinFET with source/drain structure

TAIWAN SEMICONDUCTOR MFG CO LTD27 citations94
US9911824B2Mar 6, 2018

Semiconductor structure with multi spacer

TAIWAN SEMICONDUCTOR MFG CO LTD20 citations94
US9614086B1Apr 4, 2017

Conformal source and drain contacts for multi-gate field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD27 citations94
US10483378B2Nov 19, 2019

Epitaxial features confined by dielectric fins and spacers

TAIWAN SEMICONDUCTOR MFG CO LTD12 citations93
US9941374B2Apr 10, 2018

Contacts for highly scaled transistors

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations93
US9754840B2Sep 5, 2017

Horizontal gate-all-around device having wrapped-around source and drain

TAIWAN SEMICONDUCTOR MFG CO LTD18 citations93
US9634127B2Apr 25, 2017

FinFET device and method for fabricating same

TAIWAN SEMICONDUCTOR MFG CO LTD16 citations93
US9559181B2Jan 31, 2017

Structure and method for FinFET device with buried sige oxide

TAIWAN SEMICONDUCTOR MFG CO LTD20 citations93
US9508858B2Nov 29, 2016

Contacts for highly scaled transistors

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations93
US9461110B1Oct 4, 2016

FETs and methods of forming FETs

TAIWAN SEMICONDUCTOR MFG CO LTD18 citations93
US9202917B2Dec 1, 2015

Buried SiGe oxide FinFET scheme for device enhancement

TAIWAN SEMICONDUCTOR MFG CO LTD25 citations93
US11621352B2Apr 4, 2023

Semiconductor device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations86
US11615962B2Mar 28, 2023

Semiconductor structures and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11616062B2Mar 28, 2023

Gate isolation for multigate device

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11581224B2Feb 14, 2023

Method for forming long channel back-side power rail device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11532713B2Dec 20, 2022

Source/drain contacts and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11502168B2Nov 15, 2022

Tuning threshold voltage in nanosheet transitor devices

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11462612B2Oct 4, 2022

Semiconductor device structure

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11450751B2Sep 20, 2022

Integrated circuit structure with backside via rail

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11443987B2Sep 13, 2022

Semiconductor devices with backside air gap dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11404548B2Aug 2, 2022

Capacitance reduction for backside power rail device

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86

TAIWAN SEMICONDUCTOR MFG

11 patents

WANG CHIH-HAO

1 patent

Showing the top 50 of 1,012 patents by PatentIndex Score.