Inventor
Huang yu-xuan
TW74 patents
⚠️ This page may combine multiple inventors who share the name “Huang yu-xuan”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
47 patentsUS11342326B2May 24, 2022
Self-aligned etch in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11227917B1Jan 18, 2022
Nano-sheet-based devices with asymmetric source and drain configurations
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11158634B1Oct 26, 2021
Backside PN junction diode
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11393815B2Jul 19, 2022
Transistors with varying width nanosheet
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11251308B2Feb 15, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11004855B2May 11, 2021
Buried metal track and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10734321B2Aug 4, 2020
Integrated circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10446555B2Oct 15, 2019
Buried metal track and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11610805B2Mar 21, 2023
Replacement material for backside gate cut feature
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12080713B2Sep 3, 2024
Self-aligned etch in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11996409B2May 28, 2024
Stacking CMOS structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11984402B2May 14, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11810917B2Nov 7, 2023
Self-aligned etch in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11757042B2Sep 12, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11735587B2Aug 22, 2023
Backside PN junction diode
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11532627B2Dec 20, 2022
Source/drain contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11532556B2Dec 20, 2022
Structure and method for transistors having backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11450600B2Sep 20, 2022
Semiconductor devices including decoupling capacitors
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11444200B2Sep 13, 2022
Semiconductor structure with isolating feature and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11410930B2Aug 9, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11264508B2Mar 1, 2022
Leakage prevention structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11121037B2Sep 14, 2021
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11037925B2Jun 15, 2021
Structure and method of integrated circuit having decouple capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11658119B2May 23, 2023
Backside signal interconnection
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12593504B2Mar 31, 2026
Transistors with varying width nanosheet
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12471353B2Nov 11, 2025
Gate-all around transistor with isolating feature under source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12453114B2Oct 21, 2025
Semiconductor transistor devices having double-sided interconnect structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12446283B2Oct 14, 2025
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12446303B2Oct 14, 2025
Stacking CMOS structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12432975B2Sep 30, 2025
Semiconductor device with backside power rail
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12402376B2Aug 26, 2025
High-voltage nano-sheet transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12266657B2Apr 1, 2025
Hybrid cell-based device, layout, and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12199030B2Jan 14, 2025
Semiconductor devices including decoupling capacitors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12191371B2Jan 7, 2025
Field effect transistor with disabled channels and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12183736B2Dec 31, 2024
Backside PN junction diode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12040403B2Jul 16, 2024
Semiconductor structure with isolating feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11948972B2Apr 2, 2024
High-voltage nano-sheet transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11837535B2Dec 5, 2023
Semiconductor devices including decoupling capacitors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11171138B2Nov 9, 2021
Semiconductor arrangement and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11004738B2May 11, 2021
Capacitance reduction by metal cut design
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12519009B2Jan 6, 2026
Replacement material for backside gate cut feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12506078B2Dec 23, 2025
Semiconductor devices with front side to backside conductive paths and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12389641B2Aug 12, 2025
Field effect transistor with air spacer and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12374624B2Jul 29, 2025
Semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12307183B2May 20, 2025
Variable width nano-sheet field-effect transistor cell structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12249575B2Mar 11, 2025
Integrated circuit structure with backside via
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243780B2Mar 4, 2025
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
REALTEK SEMICONDUCTOR CORP
2 patentsTAIWAN SEMICONDUCTOR MFG
1 patentShowing the top 50 of 74 patents by PatentIndex Score.