Inventor

WANG LANXIANG

SG29 patents

⚠️ This page may combine multiple inventors who share the name “WANG LANXIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG LANXIANG

GLOBALFOUNDRIES SG PTE LTD

Integrated circuits with resistive non-volatile memory cells and methods for producing the same

Memory device and a method for forming the memory device

High performance ISFET with ferroelectric material

Diode devices and methods of forming a diode device

Sensor and method of forming the same

Sensor devices

Resistive memory elements with multiple input terminals

One transistor two capacitors nonvolatile memory cell

Multi-finger gate nonvolatile memory cell

Partially silicided nonvolatile memory devices and integration schemes

Sensor and method of forming the same

Sensor devices for detecting a pH change in a solution

Sensors having resistive elements

Memory device and a method for forming the memory device

Sensors with a non-planar sensing structure

Sensors including dummy elements arranged about a sensing element

Semiconductor non-volatile memory devices

Memory devices and methods of forming memory devices

Memory structures and methods of forming memory structures

Sensor device for detecting a pH change in a solution and a method for forming the sensor device

Memory device and a method for forming the memory device

Non-volatile memory bit cells with non-rectangular floating gates

Wafer probe card integrated with a light source facing a device under test side and method of manufacturing

UNITED MICROELECTRONICS CORP

Semiconductor device and method for fabricating the same

Memory device and method for fabricating the same

Non-volatile memory device and manufacturing method thereof

Semiconductor device and method for fabricating the same

MEDIATEK SINGAPORE PTE LTD

Semiconductor devices having a resistor structure with more refined coupling effect for improved linearity of resistance

CASCO SIGNAL LTD

Full-day train operation diagram generation method based on time division scheme and activity-event relationship