Inventor · disambiguated record
Dong-Hyun Im
Also filed as: IM DONG-HYUN
34 granted patents·15 pending applications·173 citations·filing 2005–2022
97Inventor score
Top patents by PatentIndex Score
49 records- 0196US8507353B2Method of forming semiconductor device having self-aligned plugOH GYU-HWAN·Filed 2011·Granted Aug 13, 2013·38 cites·11 claims
- 0294US9337149B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 10, 2016·16 cites·17 claims
- 0390US11715666B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 1, 2023·2 cites·20 claims
- 0488US8625325B2Memory cells including resistance variable material patterns of different compositionsAN HYEONG-GEUN·Filed 2010·Granted Jan 7, 2014·13 cites·20 claims
- 0587US10373959B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 6, 2019·4 cites·20 claims
- 0686US10833088B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 10, 2020·2 cites·20 claims
- 0786US10211210B2Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 19, 2019·4 cites·18 claims
- 0884US8790976B2Method of forming semiconductor device having self-aligned plugSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 29, 2014·5 cites·9 claims
- 0984US8502184B2Nonvolatile memory device using variable resistive elementAN HYEONG-GEUN·Filed 2011·Granted Aug 6, 2013·10 cites·10 claims
- 1084US8237149B2Non-volatile memory device having bottom electrodeOH GYU-HWAN·Filed 2011·Granted Aug 7, 2012·9 cites·20 claims
- 1182US7772067B2Methods of forming phase-changeable memory devices using growth-enhancing and growth-inhibiting layers for phase-changeable materialsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 10, 2010·9 cites·20 claims
- 1281US8278206B2Variable resistance memory device and methods of forming the sameOH GYUHWAN·Filed 2009·Granted Oct 2, 2012·12 cites·21 claims
- 1379US8980679B2Apparatus and methods for forming phase change layer and method of manufacturing phase change memory deviceIM DONG-HYUN·Filed 2009·Granted Mar 17, 2015·6 cites·9 claims
- 1477US8703237B2Methods of forming a material layer and methods of fabricating a memory devicePARK HYE-YOUNG·Filed 2009·Granted Apr 22, 2014·3 cites·14 claims
- 1577US8703573B2Semiconductor device and method of manufacturing the sameOH GYU-HWAN·Filed 2012·Granted Apr 22, 2014·4 cites·20 claims
- 1676US8680500B2Phase change memory devices having buried metal silicide patternsOH GYU-HWAN·Filed 2012·Granted Mar 25, 2014·3 cites·13 claims
- 1776US8558348B2Variable resistance memory device and methods of forming the sameOH GYUHWAN·Filed 2012·Granted Oct 15, 2013·5 cites·6 claims
- 1876US7585683B2Methods of fabricating ferroelectric devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·5 cites·23 claims
- 1975US9543196B2Methods of fabricating semiconductor devices using nanowiresSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 10, 2017·2 cites·15 claims
- 2073US10868016B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·20 claims
- 2173US8644062B2Multi-level memory device using resistance materialKIM IK-SOO·Filed 2010·Granted Feb 4, 2014·4 cites·17 claims
- 2273US7838326B2Methods of fabricating semiconductor device including phase change layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 23, 2010·5 cites·20 claims
- 2372US10748909B2Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 18, 2020·1 cites·30 claims
- 2472US10535663B2Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 14, 2020·1 cites·20 claims
- 2570US8785237B2Method of forming variable resistance memory deviceIM DONG-HYUN·Filed 2009·Granted Jul 22, 2014·6 cites·18 claims
- 2666US9646971B2Semiconductor devices including nanowire capacitors and fabricating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 9, 2017·1 cites·20 claims
- 2759US11575019B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 7, 2023·0 cites·20 claims
- 2859US8841643B2Semiconductor memory device including buffer electrodeOH GYU-HWAN·Filed 2011·Granted Sep 23, 2014·1 cites·20 claims
- 2958US8187914B2Methods of forming a phase change memory deviceLEE JIN-IL·Filed 2010·Granted May 29, 2012·1 cites·15 claims
- 3055US11232973B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 25, 2022·0 cites·15 claims
- 3152US10403735B2Method of forming semiconductor device including P-N diodeSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 3, 2019·0 cites·20 claims
- 3249US2009280599A1Phase change memory device and method of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3347US2009061538A1Methods of forming ferroelectric capacitors and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3446US7811834B2Methods of forming a ferroelectric layer and methods of manufacturing a ferroelectric capacitor including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 12, 2010·0 cites·5 claims
- 3546US2012231603A1Methods of forming phase change material layers and methods of manufacturing phase change memory devicesIM DONG-HYUN·Filed 2012·Application pending·0 cites
- 3646US2011197812A1Apparatus and method for fabricating a phase-change material layerIM DONG HYUN·Filed 2010·Application pending·0 cites
- 3745US2008048226A1Direct cell via structures for ferroelectric random access memory devices and methods of fabricating such structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3841US10998619B2Ring type antenna module and jig for manufacturing sameAMOTECH CO LTD·Filed 2017·Granted May 4, 2021·0 cites·13 claims
- 3940US2013109148A1Methods of forming a pattern and methods of manufacturing semiconductor devices using the sameOH GYU-HWAN·Filed 2012·Application pending·0 cites
- 4039US7583095B2High-density probe arraySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 1, 2009·0 cites·16 claims
- 4139US2007045689A1Ferroelectric Structures Including Multilayer Lower Electrodes and Multilayer Upper Electrodes, and Methods of Manufacturing SameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4239US2012282751A1Methods of fabricating semiconductor devices including fine patternsOH GYU-HWAN·Filed 2012·Application pending·0 cites
- 4338US2007212797A1Method of forming a ferroelectric deviceCHOI SUK-HUN·Filed 2007·Application pending·0 cites
- 4437US2010248460A1Method of forming information storage patternLEE JIN-IL·Filed 2010·Application pending·0 cites
- 4537US2012289019A1Methods of forming a pattern and methods of manufacturing a semiconductor device using the sameIM DONG-HYUN·Filed 2012·Application pending·0 cites
- 4636US2006214204A1Ferroelectric structures and devices including upper/lower electrodes of different metals and methods of forming the sameYOO DONG-CHUL·Filed 2005·Application pending·0 cites
- 4735US2007058415A1Method for depositing ferroelectric thin films using a mixed oxidant gasSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4835US2009278107A1Phase change memory deviceKIM DO-HYUNG·Filed 2009·Application pending·0 cites
- 4924US2010227457A1Method of forming phase change material layer and method of fabricating phase change memory deviceAN HYEONGGEUN·Filed 2010·Application pending·0 cites
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