Inventor
LICHTENWALNER DANIEL JENNER
US34 patents
⚠️ This page may combine multiple inventors who share the name “LICHTENWALNER DANIEL JENNER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
WOLFSPEED INC
22 patentsUSRE49913EApr 9, 2024
Vertical power transistor device
WOLFSPEED INC1 citations73
US11563080B2Jan 24, 2023
Trenched power device with segmented trench and shielding
WOLFSPEED INC2 citations72
US11769827B2Sep 26, 2023
Power transistor with soft recovery body diode
WOLFSPEED INC3 citations71
US12408360B2Sep 2, 2025
Vertical power devices having mesas and etched trenches therebetween
WOLFSPEED INC0 citations62
US12057389B2Aug 6, 2024
Transistor semiconductor die with increased active area
WOLFSPEED INC0 citations62
US11682709B2Jun 20, 2023
Interface layer control methods for semiconductor power devices and semiconductor devices formed thereof
WOLFSPEED INC0 citations62
US11417760B2Aug 16, 2022
Vertical semiconductor device with improved ruggedness
WOLFSPEED INC0 citations62
US11276762B2Mar 15, 2022
Interface layer control methods for semiconductor power devices and semiconductor devices formed thereof
WOLFSPEED INC0 citations62
US12176423B2Dec 24, 2024
FinFET power semiconductor devices
WOLFSPEED INC0 citations61
US12159909B2Dec 3, 2024
Power semiconductor device with reduced strain
WOLFSPEED INC0 citations61
US12094876B2Sep 17, 2024
Conduction enhancement layers for electrical contact regions in power devices
WOLFSPEED INC0 citations61
US12087854B2Sep 10, 2024
Vertical semiconductor device with improved ruggedness
WOLFSPEED INC0 citations61
US12080790B2Sep 3, 2024
Power semiconductor devices including angled gate trenches
WOLFSPEED INC0 citations61
US12009389B2Jun 11, 2024
Edge termination for power semiconductor devices and related fabrication methods
WOLFSPEED INC0 citations61
US11990543B2May 21, 2024
Power transistor with soft recovery body diode
WOLFSPEED INC0 citations61
US11869948B2Jan 9, 2024
Power semiconductor device with reduced strain
WOLFSPEED INC0 citations61
US11489069B2Nov 1, 2022
Vertical semiconductor device with improved ruggedness
WOLFSPEED INC0 citations61
US12376319B2Jul 29, 2025
Support shield structures for trenched semiconductor devices
WOLFSPEED INC1 citations60
US12289906B2Apr 29, 2025
Vertical power devices fabricated using implanted methods
WOLFSPEED INC0 citations57
US11894455B2Feb 6, 2024
Vertical power devices fabricated using implanted methods
WOLFSPEED INC0 citations57
US11222955B2Jan 11, 2022
Semiconductor power devices having gate dielectric layers with improved breakdown characteristics and methods of forming such devices
WOLFSPEED INC0 citations57
US11764295B2Sep 19, 2023
Gate trench power semiconductor devices having improved deep shield connection patterns
WOLFSPEED INC0 citations51
CREE INC
11 patentsUS9741842B2Aug 22, 2017
Vertical power transistor device
CREE INC6 citations84
US9331197B2May 3, 2016
Vertical power transistor device
CREE INC7 citations84
USRE48380EJan 5, 2021
Vertical power transistor device
CREE INC1 citations73
US9570570B2Feb 14, 2017
Enhanced gate dielectric for a field effect device with a trenched gate
CREE INC2 citations73
US11164813B2Nov 2, 2021
Transistor semiconductor die with increased active area
CREE INC0 citations62
US10910481B2Feb 2, 2021
Semiconductor device with improved insulated gate
CREE INC0 citations62
US9111919B2Aug 18, 2015
Field effect device with enhanced gate dielectric structure
CREE INC3 citations62
US11664434B2May 30, 2023
Semiconductor power devices having multiple gate trenches and methods of forming such devices
CREE INC1 citations61
US9236433B2Jan 12, 2016
Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer
CREE INC1 citations52
US10615274B2Apr 7, 2020
Vertical semiconductor device with improved ruggedness
CREE INC0 citations51
US11175333B2Nov 16, 2021
System and process for implementing accelerated test conditions for high voltage lifetime evaluation of semiconductor power devices
CREE INC0 citations41