Inventor
TANG QIANG
CN195 patents
⚠️ This page may combine multiple inventors who share the name “TANG QIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
24 patentsUS7413981B2Aug 19, 2008
Pitch doubled circuit layout
MICRON TECHNOLOGY INC46 citations96
US9621160B2Apr 11, 2017
Circuits for impedance adjustment having multiple termination devices with switchable resistances and methods of adjusting impedance
MICRON TECHNOLOGY INC26 citations94
US9460803B1Oct 4, 2016
Data path with clock-data tracking
MICRON TECHNOLOGY INC28 citations94
US10270429B1Apr 23, 2019
Internal clock distortion calibration using DC component offset of clock signal
MICRON TECHNOLOGY INC26 citations93
US9779819B1Oct 3, 2017
Connecting memory cells to a data line sequentially while applying a program voltage to the memory cells
MICRON TECHNOLOGY INC13 citations93
US9722489B1Aug 1, 2017
Apparatuses and methods for mixed charge pumps with voltage regulator circuits
MICRON TECHNOLOGY INC15 citations93
US9165937B2Oct 20, 2015
Semiconductor devices including stair step structures, and related methods
MICRON TECHNOLOGY INC22 citations93
US10325659B1Jun 18, 2019
I/O buffer offset mitigation
MICRON TECHNOLOGY INC7 citations84
US9972363B2May 15, 2018
Apparatus for impedance adjustment and methods of their operation
MICRON TECHNOLOGY INC15 citations84
US9767894B2Sep 19, 2017
Programming memories with stepped programming pulses
MICRON TECHNOLOGY INC12 citations84
US9659950B2May 23, 2017
Semiconductor devices including stair step structures, and related methods
MICRON TECHNOLOGY INC11 citations84
US9607692B2Mar 28, 2017
Threshold voltage distribution determination
MICRON TECHNOLOGY INC11 citations84
US9368212B1Jun 14, 2016
Memory with temperature coefficient trimming
MICRON TECHNOLOGY INC10 citations84
US9312022B1Apr 12, 2016
Memory timing self-calibration
MICRON TECHNOLOGY INC6 citations84
US7705664B2Apr 27, 2010
Current mirror circuit having drain-source voltage clamp
MICRON TECHNOLOGY INC11 citations84
US7564279B2Jul 21, 2009
Power on reset circuitry in electronic systems
MICRON TECHNOLOGY INC12 citations84
US7589573B2Sep 15, 2009
Startup circuit and method
MICRON TECHNOLOGY INC8 citations82
US7145372B2Dec 5, 2006
Startup circuit and method
MICRON TECHNOLOGY INC12 citations82
US7710786B2May 4, 2010
NAND flash memory programming
MICRON TECHNOLOGY INC5 citations74
US7688635B2Mar 30, 2010
Current sensing for Flash
MICRON TECHNOLOGY INC6 citations74
US7423476B2Sep 9, 2008
Current mirror circuit having drain-source voltage clamp
MICRON TECHNOLOGY INC7 citations74
US11410730B2Aug 9, 2022
I/O buffer offset mitigation while applying a same voltage level to two inputs of an input buffer
MICRON TECHNOLOGY INC1 citations73
US10892680B2Jan 12, 2021
Electronic device with a reconfigurable charging mechanism
MICRON TECHNOLOGY INC1 citations73
US10854295B2Dec 1, 2020
I/O buffer offset mitigation
MICRON TECHNOLOGY INC2 citations73
YANGTZE MEMORY TECH CO LTD
9 patentsUS11170836B1Nov 9, 2021
Method for reading and writing memory cells in three-dimensional FeRAM
YANGTZE MEMORY TECH CO LTD16 citations94
US11721377B2Aug 8, 2023
Method for reading and writing memory cells in three-dimensional FeRAM
YANGTZE MEMORY TECH CO LTD6 citations86
US11133038B1Sep 28, 2021
Multi-die peak power management for three-dimensional memory
YANGTZE MEMORY TECH CO LTD5 citations84
US11735240B2Aug 22, 2023
Staircase bridge structures for word line contacts in three-dimensional memory
YANGTZE MEMORY TECH CO LTD2 citations73
US11475964B2Oct 18, 2022
Method for programming a memory system
YANGTZE MEMORY TECH CO LTD2 citations73
US11467741B2Oct 11, 2022
Dynamic peak power management for multi-die operations
YANGTZE MEMORY TECH CO LTD2 citations73
US11360530B1Jun 14, 2022
Peak power management for multi-die operations
YANGTZE MEMORY TECH CO LTD2 citations73
US10998063B1May 4, 2021
Memory device capable of reducing program disturbance and erasing method thereof
YANGTZE MEMORY TECH CO LTD3 citations73
US10943663B1Mar 9, 2021
Method of programming in flash memory devices
YANGTZE MEMORY TECH CO LTD5 citations73
MARVELL INT LTD
4 patentsUS7948810B1May 24, 2011
Positive and negative voltage level shifter circuit
MARVELL INT LTD18 citations93
US9436197B1Sep 6, 2016
Adaptive opamp compensation
MARVELL INT LTD13 citations84
US8378731B1Feb 19, 2013
Asymmetric correction circuit with negative resistance
MARVELL INT LTD6 citations84
US7746704B1Jun 29, 2010
Program-and-erase method for multilevel nonvolatile memory
MARVELL INT LTD6 citations74
TANG QIANG
4 patentsUSD1045430SOct 8, 2024
Sofa
TANG QIANG6 citations86
US8270234B1Sep 18, 2012
Positive and negative voltage level shifter circuit
TANG QIANG7 citations84
US8248848B1Aug 21, 2012
System and methods for multi-level nonvolatile memory read, program and erase
TANG QIANG15 citations84
US11676390B2Jun 13, 2023
Machine-learning model, methods and systems for removal of unwanted people from photographs
TANG QIANG14 citations83
ALIBABA GROUP HOLDING LTD
3 patentsUS10722649B2Jul 28, 2020
Blockchain consensus node selection
ALIBABA GROUP HOLDING LTD10 citations84
US10684925B2Jun 16, 2020
Method for view switching in a blockchain network
ALIBABA GROUP HOLDING LTD4 citations73
US10642699B2May 5, 2020
Blockchain-based consensus method and device
ALIBABA GROUP HOLDING LTD3 citations73
ADVANCED NEW TECHNOLOGIES CO LTD
2 patentsBOE TECHNOLOGY GROUP CO LTD
1 patentINTEL CORP
1 patentCHENGDU BOE OPTOELECT TECH CO
1 patentROUND ROCK RES LLC
1 patentShowing the top 50 of 195 patents by PatentIndex Score.