P

Inventor

YANG BIN

CN428 patents
⚠️ This page may combine multiple inventors who share the name “YANG BIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

QUALCOMM INC

14 patents
US9875784B1Jan 23, 2018

Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systems

QUALCOMM INC59 citations98
US9406689B2Aug 2, 2016

Logic finFET high-K/conductive gate embedded multiple time programmable flash memory

QUALCOMM INC21 citations93
US11393819B2Jul 19, 2022

Semiconductor device implemented with buried rails

QUALCOMM INC7 citations86
US10734384B1Aug 4, 2020

Vertically-integrated two-dimensional (2D) semiconductor slabs in complementary field effect transistor (CFET) cell circuits, and method of fabricating

QUALCOMM INC11 citations86
US10482929B2Nov 19, 2019

Non-volative (NV) memory (NVM) matrix circuits employing NVM matrix circuits for performing matrix computations

QUALCOMM INC9 citations84
US10453774B1Oct 22, 2019

Thermally enhanced substrate

QUALCOMM INC8 citations84
US10431581B1Oct 1, 2019

Complementary metal-oxide semiconductor (CMOS) integration with compound semiconductor devices

QUALCOMM INC8 citations84
US10224368B2Mar 5, 2019

Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path

QUALCOMM INC9 citations84
US10205018B1Feb 12, 2019

Planar double gate semiconductor device

QUALCOMM INC12 citations84
US10186514B1Jan 22, 2019

Bi-stable static random access memory (SRAM) bit cells formed from III-V compounds and configured to achieve higher operating speeds

QUALCOMM INC7 citations84
US10084074B1Sep 25, 2018

Compound semiconductor field effect transistor gate length scaling

QUALCOMM INC10 citations84
US10062683B1Aug 28, 2018

Compound semiconductor transistor and high-Q passive device single chip integration

QUALCOMM INC7 citations84
US10043826B1Aug 7, 2018

Fully depleted silicon on insulator integration

QUALCOMM INC9 citations84
US9576801B2Feb 21, 2017

High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory

QUALCOMM INC17 citations84

UATC LLC

9 patents

VELOCYS INC

4 patents

TONKOVICH ANNA LEE

4 patents

EMC CORP

3 patents

CALIFORNIA INST OF TECHN

2 patents

INFINEON TECHNOLOGIES AG

2 patents

DARTMOUTH COLLEGE

2 patents

KYMERA THERAPEUTICS INC

2 patents

UNIV JEFFERSON

1 patent

UNIV NORTH CHINA ELECTRIC POWER

1 patent

DIMARCHI RICHARD D

1 patent

VELOCYS

1 patent

ROCHE VITAMINS INC

1 patent

SCIENTIFIC ATLANTA

1 patent

CHARTERED SEMICONDUCTOR MFG

1 patent

SHANGHAI TIANMA AM OLED CO LTD

1 patent

Showing the top 50 of 428 patents by PatentIndex Score.