Inventor
MELNIK YURI V
US18 patents
⚠️ This page may combine multiple inventors who share the name “MELNIK YURI V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TECHNOLOGIES AND DEVICES INTER
11 patentsUS7501023B2Mar 10, 2009
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
TECHNOLOGIES AND DEVICES INTER57 citations98
US6936357B2Aug 30, 2005
Bulk GaN and ALGaN single crystals
TECHNOLOGIES AND DEVICES INTER80 citations97
US6613143B1Sep 2, 2003
Method for fabricating bulk GaN single crystals
TECHNOLOGIES AND DEVICES INTER85 citations97
US7279047B2Oct 9, 2007
Reactor for extended duration growth of gallium containing single crystals
TECHNOLOGIES AND DEVICES INTER36 citations95
US6656285B1Dec 2, 2003
Reactor for extended duration growth of gallium containing single crystals
TECHNOLOGIES AND DEVICES INTER47 citations95
US6616757B1Sep 9, 2003
Method for achieving low defect density GaN single crystal boules
TECHNOLOGIES AND DEVICES INTER61 citations95
US6576054B1Jun 10, 2003
Method for fabricating bulk AlGaN single crystals
TECHNOLOGIES AND DEVICES INTER49 citations95
US6849862B2Feb 1, 2005
III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer
TECHNOLOGIES AND DEVICES INTER33 citations90
US7611586B2Nov 3, 2009
Reactor for extended duration growth of gallium containing single crystals
TECHNOLOGIES AND DEVICES INTER12 citations89
US6559038B2May 6, 2003
Method for growing p-n heterojunction-based structures utilizing HVPE techniques
TECHNOLOGIES AND DEVICES INTER18 citations83
US6559467B2May 6, 2003
P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
TECHNOLOGIES AND DEVICES INTER19 citations83