Inventor
KOVÀCS-VAJNA ZSOLT MIKLOS
IT3 patents
Patents
3 patentsUS10468425B2Nov 5, 2019
Embedded non-volatile memory with single polysilicon layer memory cells erasable through band to band tunneling induced hot electron and programmable through Fowler-Nordheim tunneling
ST MICROELECTRONICS SRL1 citations58
US9361982B2Jun 7, 2016
Embedded non-volatile memory with single polysilicon layer memory cells programmable through band-to-band tunneling-induced hot electron and erasable through fowler-nordheim tunneling
ST MICROELECTRONICS SRL2 citations58
US9368209B2Jun 14, 2016
Embedded non-volatile memory with single polysilicon layer memory cells programmable through channel hot electrons and erasable through fowler-nordheim tunneling
ST MICROELECTRONICS SRL1 citations48