Inventor
BILODEAU STEVEN M
US29 patents
⚠️ This page may combine multiple inventors who share the name “BILODEAU STEVEN M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED TECH MATERIALS
16 patentsUS5972430AOct 26, 1999
Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
ADVANCED TECH MATERIALS417 citations99
US6346741B1Feb 12, 2002
Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
ADVANCED TECH MATERIALS224 citations98
US6156623ADec 5, 2000
Stress control of thin films by mechanical deformation of wafer substrate
ADVANCED TECH MATERIALS54 citations96
US7285308B2Oct 23, 2007
Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
ADVANCED TECH MATERIALS45 citations95
US6316797B1Nov 13, 2001
Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
ADVANCED TECH MATERIALS67 citations95
US5882416AMar 16, 1999
Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer
ADVANCED TECH MATERIALS130 citations93
US6984417B2Jan 10, 2006
Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
ADVANCED TECH MATERIALS15 citations92
US6514835B1Feb 4, 2003
Stress control of thin films by mechanical deformation of wafer substrate
ADVANCED TECH MATERIALS41 citations92
US7344589B2Mar 18, 2008
Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
ADVANCED TECH MATERIALS9 citations83
US7012292B1Mar 14, 2006
Oxidative top electrode deposition process, and microelectronic device structure
ADVANCED TECH MATERIALS11 citations83
US6511856B2Jan 28, 2003
Confinement of E-fields in high density ferroelectric memory device structures
ADVANCED TECH MATERIALS11 citations74
US6342711B1Jan 29, 2002
Confinement of E-fields in high density ferroelectric memory device structures
ADVANCED TECH MATERIALS8 citations74
US7862857B2Jan 4, 2011
Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
ADVANCED TECH MATERIALS3 citations73
US7705382B2Apr 27, 2010
Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
ADVANCED TECH MATERIALS6 citations73
US8034407B2Oct 11, 2011
Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
ADVANCED TECH MATERIALS4 citations62
US8053375B1Nov 8, 2011
Super-dry reagent compositions for formation of ultra low k films
ADVANCED TECH MATERIALS0 citations41
ENTEGRIS INC
10 patentsUS11875997B2Jan 16, 2024
Formulations to selectively etch silicon-germanium relative to silicon
ENTEGRIS INC2 citations73
US11365351B2Jun 21, 2022
Wet etching composition and method
ENTEGRIS INC2 citations73
US11053440B2Jul 6, 2021
Silicon nitride etching composition and method
ENTEGRIS INC3 citations71
US12300498B2May 13, 2025
Formulations to selectively etch silicon-germanium relative to silicon
ENTEGRIS INC0 citations62
US11781066B2Oct 10, 2023
Wet etching composition and method
ENTEGRIS INC0 citations62
US12595413B2Apr 7, 2026
Silicon nitride etching compositions and method
ENTEGRIS INC0 citations54
US12012540B2Jun 18, 2024
Compositions and methods for selectively etching silicon nitride films
ENTEGRIS INC0 citations53
US11530356B2Dec 20, 2022
Compositions and methods for selectively etching silicon nitride films
ENTEGRIS INC0 citations52
US10043658B2Aug 7, 2018
Precursors for silicon dioxide gap fill
ENTEGRIS INC0 citations52
US9132412B2Sep 15, 2015
Component for solar adsorption refrigeration system and method of making such component
ENTEGRIS INC0 citations51