P

Inventor

LEE HAN-SIN

KR13 patents
⚠️ This page may combine multiple inventors who share the name “LEE HAN-SIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

12 patents
US6107143AAug 22, 2000

Method for forming a trench isolation structure in an integrated circuit

SAMSUNG ELECTRONICS CO LTD287 citations99
US6331469B1Dec 18, 2001

Trench isolation structure, semiconductor device having the same, and trench isolation method

SAMSUNG ELECTRONICS CO LTD43 citations96
US6465866B2Oct 15, 2002

Trench isolation regions having trench liners with recessed ends

SAMSUNG ELECTRONICS CO LTD34 citations92
US6436611B1Aug 20, 2002

Trench isolation method for semiconductor integrated circuit

SAMSUNG ELECTRONICS CO LTD21 citations92
US6121110ASep 19, 2000

Trench isolation method for semiconductor device

SAMSUNG ELECTRONICS CO LTD40 citations92
US6083808AJul 4, 2000

Method for forming a trench isolation in a semiconductor device

SAMSUNG ELECTRONICS CO LTD19 citations92
US5858858AJan 12, 1999

Annealing methods for forming isolation trenches

SAMSUNG ELECTRONICS CO LTD28 citations92
US6258726B1Jul 10, 2001

Method of forming isolation film for semiconductor devices

SAMSUNG ELECTRONICS CO LTD13 citations74
US6875670B2Apr 5, 2005

Trench isolation method

SAMSUNG ELECTRONICS CO LTD7 citations73
US6537914B1Mar 25, 2003

Integrated circuit device isolation methods using high selectivity chemical-mechanical polishing

SAMSUNG ELECTRONICS CO LTD12 citations73
US7947540B2May 24, 2011

Multi-level semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations62
US6855590B2Feb 15, 2005

Method of manufacturing the semiconductor device intended to prevent a leakage current from occuring due to a gate induced drain leakage effect

SAMSUNG ELECTRONICS CO LTD1 citations51

SHIM HYUN-JUN

1 patent