Inventor
CHEN FEI-YUN
TW14 patents
⚠️ This page may combine multiple inventors who share the name “CHEN FEI-YUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
8 patentsUS7144673B2Dec 5, 2006
Effective photoresist stripping process for high dosage and high energy ion implantation
TAIWAN SEMICONDUCTOR MFG8 citations70
US7192489B2Mar 20, 2007
Method for polymer residue removal following metal etching
TAIWAN SEMICONDUCTOR MFG2 citations62
US7294279B2Nov 13, 2007
Method for releasing a micromechanical structure
TAIWAN SEMICONDUCTOR MFG2 citations61
US9035380B2May 19, 2015
High voltage drain-extended MOSFET having extra drain-OD addition
TAIWAN SEMICONDUCTOR MFG0 citations50
US7180651B2Feb 20, 2007
Spacer fabrication process for manufacturing reflective stealth mirrors and other MEMS devices
TAIWAN SEMICONDUCTOR MFG1 citations49
US7576374B2Aug 18, 2009
Semiconductor device with robust polysilicon fuse
TAIWAN SEMICONDUCTOR MFG0 citations46
US7083897B2Aug 1, 2006
Method of fabricating a poly fuse
TAIWAN SEMICONDUCTOR MFG0 citations46
US7384799B2Jun 10, 2008
Method to avoid amorphous-si damage during wet stripping processes in the manufacture of MEMS devices
TAIWAN SEMICONDUCTOR MFG0 citations43
TAIWAN SEMICONDUCTOR MFG CO LTD
5 patentsUS12166108B2Dec 10, 2024
Strained transistor with conductive plate
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations69
US12419088B2Sep 16, 2025
Semiconductor structure and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9466681B2Oct 11, 2016
Method and apparatus for forming a semiconductor gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12581673B2Mar 17, 2026
Schottky diode and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US12563812B2Feb 24, 2026
Composite gate dielectric for high-voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47