Inventor
HWANG YUAN-KO
TW27 patents
⚠️ This page may combine multiple inventors who share the name “HWANG YUAN-KO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
21 patentsUS6157867ADec 5, 2000
Method and system for on-line monitoring plasma chamber condition by comparing intensity of certain wavelength
TAIWAN SEMICONDUCTOR MFG68 citations95
US6256825B1Jul 10, 2001
Removal of particulate contamination in loadlocks
TAIWAN SEMICONDUCTOR MFG27 citations92
US6238160B1May 29, 2001
Method for transporting and electrostatically chucking a semiconductor wafer or the like
TAIWAN SEMICONDUCTOR MFG36 citations92
US6185085B1Feb 6, 2001
System for transporting and electrostatically chucking a semiconductor wafer or the like
TAIWAN SEMICONDUCTOR MFG29 citations92
US6030489AFeb 29, 2000
Apparatus for controlling etch rate when using consumable electrodes during plasma etching
TAIWAN SEMICONDUCTOR MFG25 citations92
US6024831AFeb 15, 2000
Method and apparatus for monitoring plasma chamber condition by observing plasma stability
TAIWAN SEMICONDUCTOR MFG27 citations92
US5858108AJan 12, 1999
Removal of particulate contamination in loadlocks
TAIWAN SEMICONDUCTOR MFG34 citations92
US5753566AMay 19, 1998
Method of spin-on-glass etchback using hot backside helium
TAIWAN SEMICONDUCTOR MFG17 citations92
US6489227B1Dec 3, 2002
Method of etching a polysilicon layer during the stripping of the photoresist shape used as an etch mask to create an opening to an underlying fuse structure
TAIWAN SEMICONDUCTOR MFG17 citations80
US6117348ASep 12, 2000
Real time monitoring of plasma etching process
TAIWAN SEMICONDUCTOR MFG17 citations77
US6024828AFeb 15, 2000
Spin-on-glass etchback uniformity improvement using hot backside helium
TAIWAN SEMICONDUCTOR MFG14 citations74
US5955383ASep 21, 1999
Method for controlling etch rate when using consumable electrodes during plasma etching
TAIWAN SEMICONDUCTOR MFG15 citations74
US6232172B1May 15, 2001
Method to prevent auto-doping induced threshold voltage shift
TAIWAN SEMICONDUCTOR MFG7 citations73
US7144673B2Dec 5, 2006
Effective photoresist stripping process for high dosage and high energy ion implantation
TAIWAN SEMICONDUCTOR MFG8 citations70
US6706601B1Mar 16, 2004
Method of forming tiny silicon nitride spacer for flash EPROM by using dry+wet etching technology
TAIWAN SEMICONDUCTOR MFG10 citations69
US6723654B2Apr 20, 2004
Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer
TAIWAN SEMICONDUCTOR MFG4 citations55
US6908813B2Jun 21, 2005
Method of forming tiny silicon nitride spacer for flash EPROM by fully wet etching technology
TAIWAN SEMICONDUCTOR MFG1 citations47
US7576374B2Aug 18, 2009
Semiconductor device with robust polysilicon fuse
TAIWAN SEMICONDUCTOR MFG0 citations46
US7083897B2Aug 1, 2006
Method of fabricating a poly fuse
TAIWAN SEMICONDUCTOR MFG0 citations46
US6617221B1Sep 9, 2003
Method of making capacitors
TAIWAN SEMICONDUCTOR MFG1 citations46
US7384799B2Jun 10, 2008
Method to avoid amorphous-si damage during wet stripping processes in the manufacture of MEMS devices
TAIWAN SEMICONDUCTOR MFG0 citations43
TAIWAN SEMICONDUCTOR MFG CO LTD
6 patentsUS10804395B2Oct 13, 2020
Metal-insensitive epitaxy formation
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10263108B2Apr 16, 2019
Metal-insensitive epitaxy formation
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11495685B2Nov 8, 2022
Metal-insensitive epitaxy formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11935951B2Mar 19, 2024
Metal-insensitive epitaxy formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10134694B2Nov 20, 2018
Method of forming redistribution layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9373594B2Jun 21, 2016
Under bump metallization
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51