Inventor
DEHERRERA MARK F
US13 patents
⚠️ This page may combine multiple inventors who share the name “DEHERRERA MARK F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
9 patentsUS6956763B2Oct 18, 2005
MRAM element and methods for writing the MRAM element
FREESCALE SEMICONDUCTOR INC20 citations92
US6909631B2Jun 21, 2005
MRAM and methods for reading the MRAM
FREESCALE SEMICONDUCTOR INC47 citations92
US6885074B2Apr 26, 2005
Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
FREESCALE SEMICONDUCTOR INC21 citations92
US6760266B2Jul 6, 2004
Sense amplifier and method for performing a read operation in a MRAM
FREESCALE SEMICONDUCTOR INC28 citations92
US7158407B2Jan 2, 2007
Triple pulse method for MRAM toggle bit characterization
FREESCALE SEMICONDUCTOR INC10 citations84
US6888743B2May 3, 2005
MRAM architecture
FREESCALE SEMICONDUCTOR INC15 citations84
US7105363B2Sep 12, 2006
Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
FREESCALE SEMICONDUCTOR INC6 citations73
US7184300B2Feb 27, 2007
Magneto resistance random access memory element
FREESCALE SEMICONDUCTOR INC8 citations72
US7088608B2Aug 8, 2006
Reducing power consumption during MRAM writes using multiple current levels
FREESCALE SEMICONDUCTOR INC5 citations54
MOTOROLA INC
3 patentsUS6545906B1Apr 8, 2003
Method of writing to scalable magnetoresistance random access memory element
MOTOROLA INC522 citations98
US6430084B1Aug 6, 2002
Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer
MOTOROLA INC101 citations98
US6518071B1Feb 11, 2003
Magnetoresistive random access memory device and method of fabrication thereof
MOTOROLA INC49 citations92