Inventor
PARK WAN JAE
KR34 patents
⚠️ This page may combine multiple inventors who share the name “PARK WAN JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS7183195B2Feb 27, 2007
Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic filler
SAMSUNG ELECTRONICS CO LTD24 citations92
US6855629B2Feb 15, 2005
Method for forming a dual damascene wiring pattern in a semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations84
US6719808B1Apr 13, 2004
Method of and apparatus for manufacturing a semiconductor device using a polysilicon hard mask
SAMSUNG ELECTRONICS CO LTD15 citations84
US6849536B2Feb 1, 2005
Inter-metal dielectric patterns and method of forming the same
SAMSUNG ELECTRONICS CO LTD12 citations82
US6657192B1Dec 2, 2003
Method of determining degree of charge-up induced by plasma used for manufacturing semiconductor device and apparatus therefor
SAMSUNG ELECTRONICS CO LTD12 citations74
US7488687B2Feb 10, 2009
Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers
SAMSUNG ELECTRONICS CO LTD7 citations73
US6479399B2Nov 12, 2002
Method of forming interlevel dielectric layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations73
US6333219B1Dec 25, 2001
Method for forming a polysilicon node in a semiconductor device
SAMSUNG ELECTRONICS CO LTD14 citations73
US7553758B2Jun 30, 2009
Method of fabricating interconnections of microelectronic device using dual damascene process
SAMSUNG ELECTRONICS CO LTD7 citations70
US7560332B2Jul 14, 2009
Integrated circuit capacitor structure
SAMSUNG ELECTRONICS CO LTD4 citations62
US7435673B2Oct 14, 2008
Methods of forming integrated circuit devices having metal interconnect structures therein
SAMSUNG ELECTRONICS CO LTD4 citations62
US7033944B2Apr 25, 2006
Dual damascene process
SAMSUNG ELECTRONICS CO LTD3 citations62
US6465346B2Oct 15, 2002
Conducting line of semiconductor device and manufacturing method thereof using aluminum oxide layer as hard mask
SAMSUNG ELECTRONICS CO LTD2 citations62
US7229875B2Jun 12, 2007
Integrated circuit capacitor structure
SAMSUNG ELECTRONICS CO LTD1 citations52
US7145140B2Dec 5, 2006
Method of determining whether a conductive layer of a semiconductor device is exposed through a contact hold
SAMSUNG ELECTRONICS CO LTD0 citations52
US7541290B2Jun 2, 2009
Methods of forming mask patterns on semiconductor wafers that compensate for nonuniform center-to-edge etch rates during photolithographic processing
SAMSUNG ELECTRONICS CO LTD1 citations48
SEMES CO LTD
15 patentsUS12308219B2May 20, 2025
Substrate treating method and substrate treating apparatus
SEMES CO LTD1 citations60
US12237151B2Feb 25, 2025
Apparatus and method for processing substrate using plasma
SEMES CO LTD0 citations59
US12176185B2Dec 24, 2024
Apparatus and method for processing substrate using plasma
SEMES CO LTD1 citations58
US12146710B2Nov 19, 2024
Substrate treating apparatus and substrate treating system comprising the same
SEMES CO LTD0 citations57
US12142492B2Nov 12, 2024
Method for treating substrate and apparatus for treating substrate
SEMES CO LTD1 citations57
US11978654B2May 7, 2024
Substrate processing apparatus
SEMES CO LTD0 citations55
US12555749B2Feb 17, 2026
Substrate treating method and substrate treating apparatus
SEMES CO LTD0 citations50
US12340983B2Jun 24, 2025
Apparatus for treating substrate and method for treating substrate
SEMES CO LTD0 citations50
US12327735B2Jun 10, 2025
Apparatus and method for processing substrate
SEMES CO LTD0 citations49
US12315699B2May 27, 2025
Substrate treating apparatus and substrate treating method
SEMES CO LTD0 citations48
US12451358B2Oct 21, 2025
Method for fabricating semiconductor device and apparatus for processing substrate using plasma
SEMES CO LTD0 citations47
US12341030B2Jun 24, 2025
Support unit and substrate treating apparatus
SEMES CO LTD0 citations47
US12463015B2Nov 4, 2025
Substrate processing apparatus and method using the plasma
SEMES CO LTD0 citations46
US12448680B2Oct 21, 2025
Method of forming pattern structure including silicon nitride
SEMES CO LTD0 citations43
US9978567B2May 22, 2018
Apparatus and method of treating a substrate
SEMES CO LTD0 citations36
TOKYO ELECTRON LTD
2 patentsUS10770294B2Sep 8, 2020
Selective atomic layer deposition (ALD) of protective caps to enhance extreme ultra-violet (EUV) etch resistance
TOKYO ELECTRON LTD6 citations72
US11372332B2Jun 28, 2022
Plasma treatment method to improve photo resist roughness and remove photo resist scum
TOKYO ELECTRON LTD0 citations62