P

Inventor

PARK WAN JAE

KR34 patents
⚠️ This page may combine multiple inventors who share the name “PARK WAN JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

16 patents
US7183195B2Feb 27, 2007

Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic filler

SAMSUNG ELECTRONICS CO LTD24 citations92
US6855629B2Feb 15, 2005

Method for forming a dual damascene wiring pattern in a semiconductor device

SAMSUNG ELECTRONICS CO LTD12 citations84
US6719808B1Apr 13, 2004

Method of and apparatus for manufacturing a semiconductor device using a polysilicon hard mask

SAMSUNG ELECTRONICS CO LTD15 citations84
US6849536B2Feb 1, 2005

Inter-metal dielectric patterns and method of forming the same

SAMSUNG ELECTRONICS CO LTD12 citations82
US6657192B1Dec 2, 2003

Method of determining degree of charge-up induced by plasma used for manufacturing semiconductor device and apparatus therefor

SAMSUNG ELECTRONICS CO LTD12 citations74
US7488687B2Feb 10, 2009

Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers

SAMSUNG ELECTRONICS CO LTD7 citations73
US6479399B2Nov 12, 2002

Method of forming interlevel dielectric layer of semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations73
US6333219B1Dec 25, 2001

Method for forming a polysilicon node in a semiconductor device

SAMSUNG ELECTRONICS CO LTD14 citations73
US7553758B2Jun 30, 2009

Method of fabricating interconnections of microelectronic device using dual damascene process

SAMSUNG ELECTRONICS CO LTD7 citations70
US7560332B2Jul 14, 2009

Integrated circuit capacitor structure

SAMSUNG ELECTRONICS CO LTD4 citations62
US7435673B2Oct 14, 2008

Methods of forming integrated circuit devices having metal interconnect structures therein

SAMSUNG ELECTRONICS CO LTD4 citations62
US7033944B2Apr 25, 2006

Dual damascene process

SAMSUNG ELECTRONICS CO LTD3 citations62
US6465346B2Oct 15, 2002

Conducting line of semiconductor device and manufacturing method thereof using aluminum oxide layer as hard mask

SAMSUNG ELECTRONICS CO LTD2 citations62
US7229875B2Jun 12, 2007

Integrated circuit capacitor structure

SAMSUNG ELECTRONICS CO LTD1 citations52
US7145140B2Dec 5, 2006

Method of determining whether a conductive layer of a semiconductor device is exposed through a contact hold

SAMSUNG ELECTRONICS CO LTD0 citations52
US7541290B2Jun 2, 2009

Methods of forming mask patterns on semiconductor wafers that compensate for nonuniform center-to-edge etch rates during photolithographic processing

SAMSUNG ELECTRONICS CO LTD1 citations48

SEMES CO LTD

15 patents
US12308219B2May 20, 2025

Substrate treating method and substrate treating apparatus

SEMES CO LTD1 citations60
US12237151B2Feb 25, 2025

Apparatus and method for processing substrate using plasma

SEMES CO LTD0 citations59
US12176185B2Dec 24, 2024

Apparatus and method for processing substrate using plasma

SEMES CO LTD1 citations58
US12146710B2Nov 19, 2024

Substrate treating apparatus and substrate treating system comprising the same

SEMES CO LTD0 citations57
US12142492B2Nov 12, 2024

Method for treating substrate and apparatus for treating substrate

SEMES CO LTD1 citations57
US11978654B2May 7, 2024

Substrate processing apparatus

SEMES CO LTD0 citations55
US12555749B2Feb 17, 2026

Substrate treating method and substrate treating apparatus

SEMES CO LTD0 citations50
US12340983B2Jun 24, 2025

Apparatus for treating substrate and method for treating substrate

SEMES CO LTD0 citations50
US12327735B2Jun 10, 2025

Apparatus and method for processing substrate

SEMES CO LTD0 citations49
US12315699B2May 27, 2025

Substrate treating apparatus and substrate treating method

SEMES CO LTD0 citations48
US12451358B2Oct 21, 2025

Method for fabricating semiconductor device and apparatus for processing substrate using plasma

SEMES CO LTD0 citations47
US12341030B2Jun 24, 2025

Support unit and substrate treating apparatus

SEMES CO LTD0 citations47
US12463015B2Nov 4, 2025

Substrate processing apparatus and method using the plasma

SEMES CO LTD0 citations46
US12448680B2Oct 21, 2025

Method of forming pattern structure including silicon nitride

SEMES CO LTD0 citations43
US9978567B2May 22, 2018

Apparatus and method of treating a substrate

SEMES CO LTD0 citations36

TOKYO ELECTRON LTD

2 patents

PARK WAN-JAE

1 patent